Technical Parameter
Driven Configuration
Low-Side
Gate Type
IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply
4.5V ~ 35V
Logic Voltage - VIL, VIH
0.8V, 3V
Current - Peak Output (Source, Sink)
2A, 2A
High Side Voltage - Max (Bootstrap)
-
Rise / Fall Time (Typ)
7.5ns, 6.5ns
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Supplier Device Package
8-DFN-EP (5x4)
