Technical Parameter
Driven Configuration
Low-Side
Gate Type
IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply
8.5V ~ 35V
Logic Voltage - VIL, VIH
0.8V, 3.5V
Current - Peak Output (Source, Sink)
30A, 30A
High Side Voltage - Max (Bootstrap)
-
Rise / Fall Time (Typ)
18ns, 16ns
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Supplier Device Package
TO-263-5
