Technical Parameter
Driven Configuration
Half-Bridge
Gate Type
IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply
10V ~ 25V
Logic Voltage - VIL, VIH
1.1V, 1.7V
Current - Peak Output (Source, Sink)
-
High Side Voltage - Max (Bootstrap)
600 V
Rise / Fall Time (Typ)
48ns, 24ns
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
14-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-14-2