Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25℃
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
145mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
115 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
800mW (Ta)
Operating Temperature
150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
5-MCPH
Package / Case
6-SMD (5 Leads), Flat Lead
