FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
60 V
Current - Continuous Drain (Id) @ 25℃
2A (Ta)
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
145mOhm @ 1A, 4V
78mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 4 V
10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
115 pF @ 10 V
505 pF @ 20 V
FET Feature
Schottky Diode (Isolated)
-
Power Dissipation (Max)
800mW (Ta)
-
Operating Temperature
150 ℃ (TJ)
-
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
5-MCPH
6-MCPH
Package / Case
6-SMD (5 Leads), Flat Lead
6-SMD, Flat Leads
