## Description of the IRL1104

The IRL1104 is an N-channel HEXFET power MOSFET manufactured by Infineon Technologies through its acquisition of International Rectifier. It belongs to the fifth generation of HEXFET devices that employ advanced processing techniques to deliver the lowest possible on-resistance per silicon area while combining fast switching speeds and a ruggedized design. This results in an extremely efficient component suitable for a broad range of power conversion and control applications. The logic-level gate drive capability allows direct interfacing with 5V logic circuits without the need for additional gate drivers in many cases. Packaged in the industry-standard TO-220AB through-hole format the IRL1104 supports power dissipation levels up to approximately 50 watts in typical commercial and industrial environments though its full rating extends much higher under proper heatsinking. Its ultra-low on-resistance minimizes conduction losses making it ideal for high-current low-voltage switching where efficiency is paramount. The device is fully avalanche rated and features a dynamic dv/dt rating that enhances reliability during fast transients. Operating junction temperature up to 175 degrees Celsius provides headroom for demanding thermal conditions.

## Key Features

The IRL1104 incorporates several design advancements that set it apart from earlier MOSFET generations. It supports logic-level gate drive with a threshold voltage compatible with 4.5 volt operation. Advanced process technology yields an ultra-low on-resistance of 0.008 ohms maximum at 10 volts gate drive and 0.012 ohms maximum at 4.5 volts. The device exhibits a dynamic dv/dt rating of 5.0 volts per nanosecond ensuring robustness against voltage spikes. It is rated for continuous operation at 175 degrees Celsius junction temperature. Fast switching characteristics are achieved through optimized capacitances and gate charges. The MOSFET is fully avalanche rated with a single-pulse avalanche energy capability of 340 millijoules. Additional benefits include low gate charge for reduced drive power and excellent thermal performance enabled by the TO-220 package geometry. These features collectively enable higher efficiency lower heat generation and simplified circuit designs compared to non-logic-level or higher-resistance equivalents.

## Applications

The IRL1104 is widely employed in power management circuits where high current handling low conduction losses and logic-level control are required. In DC-DC converters it serves as a synchronous rectifier or low-side switch delivering high efficiency in buck boost or buck-boost topologies operating from low-voltage rails. Motor control applications such as automotive actuators fan drivers and small DC motors benefit from its high current capability and avalanche ruggedness during inductive load switching. Battery management systems use the device for load switching and protection owing to its low on-resistance and logic compatibility with microcontrollers. In automotive electronics it appears in power distribution modules lighting drivers and solenoid controls where 12 volt or 24 volt systems demand reliable high-current switching. Industrial automation equipment incorporates it in programmable logic controller outputs valve drivers and sensor interfaces. Uninterruptible power supplies and inverter circuits leverage its fast switching for reduced switching losses. Additional uses include audio amplifiers class-D switching stages and high-current LED drivers. The TO-220 package facilitates easy mounting on heatsinks for applications dissipating tens of watts while the logic-level input simplifies integration with digital control systems.

## Pin Configuration for the TO-220AB Package

The IRL1104 is housed in a three-lead TO-220AB plastic package with the following pin assignments. Pin 1 is the gate terminal which receives the control signal. Pin 2 is the drain connection that carries the main load current and is also internally connected to the tab for heatsinking. Pin 3 is the source terminal which is typically connected to ground or the return path. The metal tab of the package is electrically connected to the drain and serves as the primary thermal path when mounted to a heatsink. This standard configuration allows straightforward PCB or chassis mounting with minimal layout changes when replacing older power devices. When installing care must be taken to apply proper torque to the mounting screw and to use thermal interface material to achieve the specified junction-to-case thermal resistance. The package leads are designed for through-hole soldering and the overall footprint conforms to JEDEC TO-220AB outlines for compatibility with existing assembly processes.

## Absolute Maximum Ratings

Operation of the IRL1104 beyond the absolute maximum ratings can result in permanent damage or reduced reliability. The drain-to-source voltage is rated at a maximum of 40 volts. Gate-to-source voltage must remain within plus or minus 16 volts to avoid gate oxide breakdown. Continuous drain current reaches 104 amperes at a case temperature of 25 degrees Celsius and derates to 74 amperes at 100 degrees Celsius case temperature when gate-source voltage is 10 volts. Pulsed drain current is limited to 416 amperes. Power dissipation at 25 degrees Celsius case temperature is 167 watts with a linear derating factor of 1.1 watts per degree Celsius above that point. Single-pulse avalanche energy is 340 millijoules while repetitive avalanche energy is 17 millijoules. Avalanche current is rated at 62 amperes. Peak diode recovery dv/dt is 5.0 volts per nanosecond. Operating and storage junction temperature range extends from minus 55 degrees Celsius to plus 175 degrees Celsius. Soldering temperature for 10 seconds at 1.6 millimeters from the case is 300 degrees Celsius. Mounting torque for a 6-32 or M3 screw is 10 pound-force inches or 1.1 newton meters. These ratings define the safe operating envelope and actual circuit design must ensure junction temperature remains within limits under all conditions.

## Electrical Characteristics

Electrical characteristics for the IRL1104 are specified at a junction temperature of 25 degrees Celsius unless otherwise noted with additional data provided over the full temperature range. Drain-to-source breakdown voltage is a minimum of 40 volts at zero gate voltage and 250 microamperes drain current. Breakdown voltage temperature coefficient is typically 0.04 volts per degree Celsius referenced to 25 degrees Celsius at 1 milliampere. Static drain-to-source on-resistance is a maximum of 0.008 ohms at 10 volts gate-source and 62 amperes drain current and 0.012 ohms maximum at 4.5 volts gate-source and 52 amperes. Gate threshold voltage lies between 1.0 volt minimum and 3.0 volts maximum at drain-source equal to gate-source and 250 microamperes. Forward transconductance is a minimum of 53 siemens at 25 volts drain-source and 62 amperes. Gate-to-source forward leakage is maximum 100 nanoamperes at 16 volts while reverse leakage is minus 100 nanoamperes at minus 16 volts. Drain-to-source leakage current is specified over temperature with typical values in the microampere range. Total gate charge is maximum 68 nanocoulombs at 62 amperes drain current and 32 volts drain-source with 4.5 volts gate drive. Gate-to-source charge is maximum 24 nanocoulombs and gate-to-drain Miller charge is maximum 33 nanocoulombs under the same conditions. Switching times include turn-on delay of typically 18 nanoseconds rise time 257 nanoseconds turn-off delay 32 nanoseconds and fall time 64 nanoseconds when tested with 20 volts drain supply 62 amperes 3.6 ohm gate resistance and 0.4 ohm drain resistance. Input capacitance is typically 3445 picofarads output capacitance 1065 picofarads and reverse transfer capacitance 270 picofarads at 25 volts drain-source zero gate voltage and 1 megahertz. Internal drain inductance is typically 4.5 nanohenries and source inductance 7.5 nanohenries measured from lead to die center. These parameters confirm the device's suitability for high-efficiency high-frequency switching while maintaining low drive requirements.

## Thermal Characteristics

Thermal management is critical for the IRL1104 given its high current capability. Junction-to-case thermal resistance is 0.9 degrees Celsius per watt maximum. Case-to-sink thermal resistance with a flat greased surface is typically 0.50 degrees Celsius per watt. Junction-to-ambient thermal resistance in free air is 62 degrees Celsius per watt. The maximum effective transient thermal impedance junction-to-case follows a curve that allows short-duration high-power pulses before reaching thermal equilibrium. Derating curves show maximum drain current as a function of case temperature decreasing linearly from 104 amperes at 25 degrees Celsius. Safe operating area plots combine DC limits with single-pulse and repetitive pulse boundaries ensuring the device stays within thermal and electrical stress limits. These thermal figures enable designers to select appropriate heatsinks and verify that junction temperature remains below 175 degrees Celsius under worst-case power dissipation.

## Typical Performance Characteristics

The datasheet provides extensive graphical data illustrating the IRL1104 behavior across operating conditions. Output characteristics curves plot drain current versus drain-source voltage at multiple gate voltages from 2.7 volts to 15 volts and at both 25 degrees Celsius and 175 degrees Celsius junction temperatures with 20 microsecond pulse width. Transfer characteristics show drain current versus gate-source voltage at 50 volts drain-source again at the two temperature extremes. Normalized on-resistance versus temperature indicates a modest increase with rising junction temperature confirming good thermal stability. Capacitance curves depict input output and reverse transfer capacitances decreasing with increasing drain-source voltage at 1 megahertz. Gate charge curves display total gate-source and Miller charges versus gate voltage at 62 amperes and 32 volts drain-source. Source-drain diode forward voltage versus current is shown at 25 degrees Celsius and 175 degrees Celsius. Maximum safe operating area encompasses DC thermal limits and pulsed boundaries. Maximum drain current versus case temperature derates from full rating at elevated temperatures. Switching waveforms and test circuits detail turn-on and turn-off behavior. Transient thermal impedance curves allow calculation of peak junction temperature during pulsed operation. Unclamped inductive switching waveforms and avalanche energy versus current plots demonstrate ruggedness under inductive load conditions. Peak diode recovery dv/dt test circuits and results further validate switching performance. These characteristics provide designers with the data needed to model behavior accurately in SPICE simulations or hand calculations.

## Applications Information and Design Considerations

Successful implementation of the IRL1104 requires attention to layout gate drive thermal design and protection. Logic-level drive simplifies interfacing but gate voltage should still reach at least 4.5 volts for full enhancement and minimal on-resistance. A series gate resistor between 3.6 ohms and 10 ohms damps oscillations and controls dv/dt while a pull-down resistor prevents false turn-on from noise. Layout must minimize loop inductance in the drain-source path to reduce voltage spikes during switching; wide traces ground planes and short lead lengths are recommended. Heatsink selection follows from power dissipation calculations using the thermal resistance values and ensuring junction temperature stays safely below 175 degrees Celsius. Thermal interface material with low thermal resistance improves case-to-sink performance. Avalanche energy capability allows the device to absorb inductive spikes without external clamps in many cases but repetitive avalanche should respect the 17 millijoule limit. Body diode characteristics support synchronous rectification with reverse recovery time and charge specified for efficiency calculations. Parallel operation of multiple devices is possible with current sharing ensured by matched on-resistance and careful layout. For high-frequency applications the low gate charge and capacitances reduce switching losses enabling higher efficiency. The datasheet includes example circuits for typical applications such as low-side switches in motor drives and DC-DC converters illustrating proper component selection and layout practices.

## Package and Ordering Details for the IRL1104

The IRL1104 is supplied in the TO-220AB package which measures approximately 10.54 millimeters in length 4.69 millimeters in width and 15.24 millimeters in height with standard 2.54 millimeter lead spacing. This through-hole package is optimized for vertical or horizontal mounting on printed circuit boards or directly to heatsinks using a single screw. Lead finish is typically tin-lead or lead-free depending on the specific variant ordered. The part is marked with the International Rectifier logo followed by the date code and lot information for traceability. Ordering is done under the base part number IRL1104 with PbF suffix for lead-free versions where available. The device is intended for commercial and industrial temperature grades though its 175 degrees Celsius rating exceeds standard commercial limits. Tape and reel or tube packaging options are available through distributors for high-volume production. Thermal resistance values assume proper mounting and the package conforms to JEDEC standards ensuring mechanical compatibility with legacy designs.