Overview of the Infineon Technologies IRL1004
The IRL1004 is an N-channel HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier), utilizing fifth-generation advanced processing techniques to achieve extremely low on-resistance per silicon area while maintaining fast switching speed and ruggedized design. This logic-level device is optimized for low-voltage, high-current applications and operates with gate drive as low as 4.5 V. It features a planar cell structure for wide safe operating area, high avalanche energy capability, and full qualification to industry standards. The device is housed in the industry-standard TO-220AB through-hole package, delivering high current handling and low thermal resistance for efficient power dissipation in commercial and industrial systems. Note that the IRL1004 (and its PbF lead-free variant) has reached end-of-life status and is discontinued, with recommended migration to newer equivalents for new designs.

Key Features
This MOSFET incorporates several performance advantages tailored for high-efficiency switching:
- Logic-level gate drive compatible with 4.5 V and 10 V control signals.
- Ultra-low on-state resistance for minimized conduction losses.
- Advanced process technology with dynamic dv/dt rating.
- 175 °C maximum operating junction temperature.
- Fast switching characteristics.
- Fully avalanche rated for robust energy handling.
- Planar cell structure providing wide safe operating area.
- High-current capability up to 130 A.
- RoHS-compliant and halogen-free construction (in PbF variants).
- Industry-standard TO-220 package for broad compatibility and cost-effectiveness.

These attributes make the device highly efficient for applications requiring low conduction losses and reliable operation under high current and temperature stress.

Absolute Maximum Ratings
The absolute maximum ratings define the operational limits at TC = 25 °C unless otherwise noted:
- Drain-to-source voltage (V_DSS): 40 V.
- Gate-to-source voltage (V_GS): ±16 V.
- Continuous drain current (I_D): 130 A (TC = 25 °C, V_GS = 10 V); 92 A (TC = 100 °C, V_GS = 10 V).
- Pulsed drain current (I_DM): 520 A.
- Power dissipation (P_D): 200 W (TC = 25 °C).
- Linear derating factor: 1.3 W/°C.
- Single pulse avalanche energy (E_AS): 700 mJ (TJ start = 25 °C, L = 0.23 mH, R_G = 25 Ω, I_AS = 78 A).
- Avalanche current (I_AR): 78 A.
- Repetitive avalanche energy (E_AR): 20 mJ (pulse width ≤ 300 µs, duty cycle ≤ 2 %).
- Peak diode recovery dv/dt: 5.0 V/ns.
- Operating junction temperature (T_J): –55 °C to +175 °C.
- Storage temperature range (T_STG): –55 °C to +175 °C.
- Soldering temperature: 300 °C (for 10 seconds, 1.6 mm from case).
- Mounting torque: 10 lbf·in (1.1 N·m) for 6-32 or M3 screw.

These ratings ensure the device can handle high current transients and inductive switching stresses typical in power conversion circuits when properly heatsinked.

Electrical Characteristics
Electrical parameters are specified at T_J = 25 °C unless otherwise noted, with pulse testing used for on-resistance measurements.

Static Characteristics:
- Drain-to-source breakdown voltage (V_(BR)DSS): 40 V minimum (V_GS = 0 V, I_D = 250 µA).
- Breakdown voltage temperature coefficient (∆V_(BR)DSS / ∆T_J): 0.04 V/°C typical.
- Static drain-to-source on-resistance (R_DS(on)): maximum 0.0065 Ω (V_GS = 10 V, I_D = 78 A); maximum 0.009 Ω (V_GS = 4.5 V, I_D = 65 A).
- Gate threshold voltage (V_GS(th)): 1.0 V minimum (V_DS = V_GS, I_D = 250 µA).
- Forward transconductance (g_fs): 63 S typical (V_DS = 25 V, I_D = 78 A).
- Gate-to-source leakage current (I_GSS): ±100 nA maximum (V_GS = ±16 V).

Dynamic Characteristics:
- Total gate charge (Q_g): maximum 100 nC (I_D = 78 A, V_DS = 32 V).
- Gate-to-source charge (Q_gs): maximum 32 nC.
- Gate-to-drain charge (Q_gd): maximum 43 nC.
- Turn-on delay time (t_d(on)): 16 ns typical.
- Rise time (t_r): 210 ns typical.
- Turn-off delay time (t_d(off)): 25 ns typical.
- Fall time (t_f): 14 ns typical (all switching times measured at V_DD = 20 V, I_D = 78 A, R_G = 2.5 Ω, V_GS = 4.5 V, R_D = 0.18 Ω).
- Input capacitance (C_iss): 5330 pF maximum (V_DS = 25 V, V_GS = 0 V).

Source-Drain Diode Ratings and Characteristics:
- Continuous source current (body diode): 130 A.
- Pulsed source current: 520 A.
- Forward on voltage (V_SD): typically low due to inherent body diode performance (exact values align with avalanche-rated design).

The logic-level threshold and low gate charge enable direct drive from microcontrollers or low-voltage logic, while the low R_DS(on) minimizes power losses at high currents.

Thermal and Mechanical Characteristics
Thermal performance is critical for sustained high-power operation:
- Junction-to-case thermal resistance (R_θJC): maximum 0.75 °C/W.
- Case-to-sink thermal resistance (R_θCS): 0.50 °C/W (flat, greased surface).
- Junction-to-ambient thermal resistance (R_θJA): 62 °C/W.

The positive temperature coefficient of on-resistance aids parallel operation and inherent current sharing. The device exhibits excellent ruggedness under avalanche conditions and supports high junction temperatures for demanding environments.

Package Dimensions and Outline
The IRL1004 utilizes the standard TO-220AB through-hole package (PG-TO220-3), optimized for heatsink mounting and high power dissipation. Pin configuration (standard orientation) is:
- Pin 1: Gate
- Pin 2: Drain (tab connected to drain)
- Pin 3: Source

Key mechanical features include robust lead frame construction, low package cost, and compatibility with standard PCB footprints. The package supports mounting torque specifications and provides excellent thermal conductivity to external heatsinks. It is supplied in tubes (typically 1000 pieces per tube) and is RoHS-compliant and halogen-free in the PbF version.

Applications
The IRL1004 is recommended for a wide range of low-voltage, high-current switching tasks, including:
- DC-DC converters and synchronous rectification.
- Motor control and automotive load switching.
- Battery-powered systems and portable power management.
- High-current industrial power supplies.
- Solenoid and relay drivers.
- Low-frequency switching applications below 100 kHz.
- General-purpose power switching where logic-level drive and low R_DS(on) are required.

Its combination of high current rating, low on-resistance, and avalanche ruggedness makes it suitable for cost-effective designs in commercial-industrial equipment, with the TO-220 package facilitating easy heatsinking for power levels up to 200 W.

Ordering and Status Information
The base ordering code IRL1004 corresponds to the N-channel MOSFET in the TO-220AB package. The common PbF (lead-free) variant is IRL1004PbF, fully RoHS-compliant. The device is supplied in tube packaging. This part is classified as end-of-life and discontinued, with limited availability through existing stock. For new designs, Infineon recommends evaluating the replacement IPP041N04N-G or equivalent modern devices for continued support, improved performance, and long-term availability.

This HEXFET power MOSFET delivers a proven, high-reliability solution for engineers seeking low-voltage, high-current switching with logic-level compatibility and excellent thermal performance in through-hole applications. Proper heatsinking, gate drive considerations, and layout practices for minimizing parasitic inductance are essential to achieve maximum efficiency and ruggedness across the full operating temperature range.