The onsemi 2SK3072-TB-E is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in power management and switching. This device is particularly well-suited for use in power supplies, motor drives, and other high-efficiency applications due to its low on-resistance and fast switching capabilities. Below is a detailed overview of the 2SK3072-TB-E, including its specifications and features.

## Overview

The 2SK3072-TB-E is part of onsemi's extensive portfolio of MOSFETs, which are known for their reliability, efficiency, and performance in demanding applications. This N-channel MOSFET is designed to handle high voltages and currents, making it ideal for a wide range of power electronics applications.

## Key Features

1. N-Channel Configuration: The 2SK3072-TB-E is an N-channel MOSFET, which typically offers lower on-resistance and higher efficiency compared to P-channel devices, making it suitable for high-speed switching applications.

2. Low On-Resistance (RDS(on)): One of the standout features of this MOSFET is its low on-resistance, which minimizes power loss during operation. This characteristic is crucial for applications where efficiency is paramount.

3. High Voltage Rating: The device is rated for a maximum drain-source voltage (VDS) of 30V, allowing it to be used in various applications that require reliable performance under high voltage conditions.

4. High Current Handling: The 2SK3072-TB-E can handle continuous drain currents of up to 60A, making it suitable for applications that require significant power handling capabilities.

5. Fast Switching Speed: The MOSFET is designed for fast switching, which is essential for applications such as DC-DC converters and motor control, where rapid transitions between on and off states are required.

6. Thermal Performance: The device features a robust thermal design, allowing it to operate efficiently at elevated temperatures. This is particularly important in power applications where heat dissipation is a concern.

7. Compact Package: The 2SK3072-TB-E is available in a TO-220 package, which provides good thermal performance and ease of mounting in various applications.

## Specifications

- Device Type: N-channel MOSFET
- Maximum Drain-Source Voltage (VDS): 30V
- Maximum Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 60A
- Pulsed Drain Current (IDM): 100A
- On-Resistance (RDS(on)):
- Typically 10 mΩ at VGS = 10V
- Typically 12 mΩ at VGS = 4.5V
- Gate Threshold Voltage (VGS(th)): 1V to 3V
- Total Gate Charge (Qg): Approximately 40 nC at VGS = 10V
- Maximum Power Dissipation (PD): 94W (at 25°C)
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-220

## Applications

The onsemi 2SK3072-TB-E is suitable for a wide range of applications, including:

- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation and power conversion.
- Motor Drives: Ideal for driving DC motors and brushless DC motors in various industrial and consumer applications.
- DC-DC Converters: Employed in buck, boost, and buck-boost converters for efficient power management.
- Lighting Control: Suitable for LED drivers and lighting control applications where efficient switching is required.
- Automotive Applications: Can be used in automotive power management systems, including battery management and electric vehicle applications.

## Conclusion

The onsemi 2SK3072-TB-E is a high-performance N-channel MOSFET that offers excellent efficiency, low on-resistance, and robust performance in a variety of applications. Its ability to handle high voltages and currents, combined with fast switching capabilities, makes it an ideal choice for power management and control applications. With its compact TO-220 package and reliable thermal performance, the 2SK3072-TB-E is a valuable component for engineers and designers looking to enhance the efficiency and performance of their electronic systems.