Driven Configuration
Half-Bridge
Half-Bridge
Channel Type
3-Phase
Synchronous
Gate Type
IGBT, N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage - Supply
10V ~ 20V
5V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2V
0.8V, 2.9V
Current - Peak Output (Source, Sink)
250mA, 500mA
200mA, 350mA
Input Type
Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
1200 V
600 V
Rise / Fall Time (Typ)
90ns, 40ns
130ns, 50ns
Operating Temperature
125 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Package / Case
28-SOIC (0.295", 7.50mm Width)
8-DIP (0.300", 7.62mm)
Supplier Device Package
28-SOIC
8-PDIP
