Packaging
Tube
Bulk or Tube
Driven Configuration
Half-Bridge
Half-Bridge
Channel Type
3-Phase
3-Phase
Gate Type
IGBT, N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage - Supply
10V ~ 20V
10V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2V
0.8V, 3V
Current - Peak Output (Source, Sink)
250mA, 500mA
200mA, 350mA
Input Type
Inverting
Inverting
High Side Voltage - Max (Bootstrap)
1200 V
600 V
Rise / Fall Time (Typ)
90ns, 40ns
125ns, 50ns
Operating Temperature
125 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Package / Case
28-SOIC (0.295", 7.50mm Width)
28-DIP (0.600", 15.24mm)
Supplier Device Package
28-SOIC
28-PDIP
