Driven Configuration
Half-Bridge
High-Side or Low-Side
Channel Type
Independent
Independent
Gate Type
IGBT
IGBT, N-Channel MOSFET
Voltage - Supply
11.5V ~ 20V
5V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2V
0.8V, 2.9V
Current - Peak Output (Source, Sink)
2A, 3A
200mA, 350mA
Input Type
Non-Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
1200 V
600 V
Rise / Fall Time (Typ)
24ns, 7ns
130ns, 50ns
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Package / Case
24-SSOP (0.209", 5.30mm Width)
8-DIP (0.300", 7.62mm)
Supplier Device Package
24-SSOP
8-PDIP
