Driven Configuration
Half-Bridge
Half-Bridge
Channel Type
Independent
3-Phase
Gate Type
IGBT, N-Channel MOSFET
IGBT
Voltage - Supply
12V ~ 20V
12.5V ~ 20V
Logic Voltage - VIL, VIH
6V, 9.5V
0.8V, 2V
Current - Peak Output (Source, Sink)
2A, 2.5A
350mA, 540mA
Input Type
Non-Inverting
Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap)
1200 V
1200 V
Rise / Fall Time (Typ)
25ns, 17ns
80ns, 25ns
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 125 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
16-SOIC (0.295", 7.50mm Width)
64-BQFP
Supplier Device Package
16-SOIC
64-MQFP (20x14)
