Driven Configuration
Half-Bridge
Half-Bridge
Channel Type
Synchronous
Independent
Gate Type
IGBT, N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage - Supply
10V ~ 20V
10V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2.7V
0.8V, 2.9V
Current - Peak Output (Source, Sink)
1.9A, 2.3A
200mA, 350mA
Input Type
Non-Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
600 V
600 V
Rise / Fall Time (Typ)
40ns, 20ns
150ns, 50ns
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Package / Case
14-DIP (0.300", 7.62mm)
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
14-DIP
8-SOIC
