Driven Configuration
Half-Bridge
Half-Bridge
Channel Type
Independent
3-Phase
Gate Type
IGBT, N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage - Supply
10V ~ 20V
10V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2.7V
0.8V, 2V
Current - Peak Output (Source, Sink)
1.9A, 2.3A
250mA, 500mA
Input Type
Non-Inverting
Inverting
High Side Voltage - Max (Bootstrap)
600 V
1200 V
Rise / Fall Time (Typ)
40ns, 20ns
90ns, 40ns
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
125 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Package / Case
8-DIP (0.300", 7.62mm)
28-SOIC (0.295", 7.50mm Width)
Supplier Device Package
8-PDIP
28-SOIC
