Status
Obsolete
Not For New Designs
Driven Configuration
Half-Bridge
High-Side or Low-Side
Channel Type
3-Phase
Independent
Gate Type
IGBT, N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage - Supply
11.5V ~ 20V
5V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 3V
0.8V, 2.9V
Current - Peak Output (Source, Sink)
200mA, 350mA
200mA, 350mA
Input Type
Inverting, Non-Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
600 V
600 V
Rise / Fall Time (Typ)
125ns, 50ns
130ns, 50ns
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Package / Case
28-DIP (0.600", 15.24mm)
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
28-PDIP
8-SOIC
