Driven Configuration
Half-Bridge
Half-Bridge
Channel Type
3-Phase
3-Phase
Gate Type
IGBT, N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage - Supply
11.5V ~ 20V
11.5V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 3V
0.8V, 2.5V
Current - Peak Output (Source, Sink)
200mA, 350mA
200mA, 350mA
Input Type
Inverting, Non-Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
600 V
600 V
Rise / Fall Time (Typ)
125ns, 50ns
125ns, 50ns
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Package / Case
28-DIP (0.600", 15.24mm)
28-SOIC (0.295", 7.50mm Width)
Supplier Device Package
28-PDIP
28-SOIC
