Driven Configuration
Low-Side
High-Side or Low-Side
Channel Type
Independent
Synchronous
Gate Type
N-Channel, P-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage - Supply
4.5V ~ 16V
4.5V ~ 16V
Logic Voltage - VIL, VIH
0.8V, 2.4V
0.6V, 2.4V
Current - Peak Output (Source, Sink)
2A, 2A
4A, 4A
Input Type
Inverting, Non-Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
-
-
Rise / Fall Time (Typ)
10ns, 10ns (Max)
4ns, 4ns
Operating Temperature
-40 ℃ ~ 125 ℃ (TJ)
-40 ℃ ~ 125 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Package / Case
20-SOIC (0.295", 7.50mm Width)
8-DIP (0.300", 7.62mm)
Supplier Device Package
20-SOIC
8-PDIP
