Driven Configuration
High-Side or Low-Side
High-Side or Low-Side
Channel Type
Single
Synchronous
Gate Type
IGBT
IGBT, N-Channel MOSFET
Voltage - Supply
4.5V ~ 16.5V
4.5V ~ 16V
Logic Voltage - VIL, VIH
0.8V, 2.4V
0.6V, 2.4V
Current - Peak Output (Source, Sink)
3.5A, 3.5A
4A, 4A
Input Type
Non-Inverting
Non-Inverting
High Side Voltage - Max (Bootstrap)
-
-
Rise / Fall Time (Typ)
14.5ns, 15ns
4ns, 4ns
Operating Temperature
-40 ℃ ~ 125 ℃ (TJ)
-40 ℃ ~ 125 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Package / Case
8-SOIC (0.154", 3.90mm Width)
8-DIP (0.300", 7.62mm)
Supplier Device Package
8-SOIC
8-PDIP
