FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
20 V
Current - Continuous Drain (Id) @ 25℃
4A (Ta)
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
52mOhm @ 2A, 4V
145mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4 V
1.8 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 10 V
115 pF @ 10 V
FET Feature
-
Schottky Diode (Isolated)
Power Dissipation (Max)
1W (Ta)
800mW (Ta)
Operating Temperature
150 ℃ (TJ)
150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
3-MCPH
5-MCPH
Package / Case
3-SMD, Flat Leads
6-SMD (5 Leads), Flat Lead
