Series
HiPerFET, Ultra X2
HiPerFET
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
500 V
Current - Continuous Drain (Id) @ 25℃
34A (Tc)
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
105mOhm @ 17A, 10V
80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3330 pF @ 25 V
9125 pF @ 25 V
Power Dissipation (Max)
540W (Tc)
735W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-247 (IXTH)
PLUS247?-3
Package / Case
TO-247-3
TO-247-3 Variant
