Series
HiPerFET, Ultra X2
HiPerFET, TrenchT2
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
75 V
Current - Continuous Drain (Id) @ 25℃
34A (Tc)
520A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
105mOhm @ 17A, 10V
2.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3330 pF @ 25 V
41000 pF @ 25 V
Power Dissipation (Max)
540W (Tc)
1250W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-247 (IXTH)
PLUS247?-3
Package / Case
TO-247-3
TO-247-3 Variant
