2SB860-E
2SB860-E
Active
Description:  POWER BIPOLAR TRANSISTOR, PNP
Manufacturer:  Renesas Electronics
Datasheet:   2SB860-E Datasheet
History Price: $0.97000
In Stock: 24000
2SB860-E vs 2SB817C-1E
Mfr Part
Series
-
-
Packaging
Bulk
Tube
Status
Active
Obsolete
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
12 A
Voltage - Collector Emitter Breakdown (Max)
-
140 V
Vce Saturation (Max) @ Ib, Ic
-
2V @ 500mA, 5A
Current - Collector Cutoff (Max)
-
100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
100 @ 1A, 5V
Power - Max
-
120 W
Frequency - Transition
-
10MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
-
TO-3P-3, SC-65-3
Supplier Device Package
-
TO-3P-3L