2SB817C-1E
2SB817C-1E
Obsolete
Description:  TRANS PNP 140V 12A TO3P-3L
Manufacturer:  onsemi
Datasheet:   2SB817C-1E Datasheet
History Price: Obsolete
In Stock: 20000
2SB817C-1E Distributors
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Mfr Part
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Slogan
Updated
10000
$
Apr 23, 2026
2SB817C-1E Specification
Specification
Mfr Part
2SB817C-1E
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
onsemi
Series
-
Packaging
Tube
Status
Obsolete
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
PNP
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
140 V
Vce Saturation (Max) @ Ib, Ic
2V @ 500mA, 5A
Current - Collector Cutoff (Max)
100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 5V
Power - Max
120 W
Frequency - Transition
10MHz
Operating Temperature
150 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P-3L
2SB817C-1E PDF Datasheet
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2SB817C-1E Description
Overview of onsemi 2SB817C-1E

The onsemi 2SB817C-1E is a high-performance NPN bipolar junction transistor (BJT) designed for various applications in electronic circuits. This transistor is particularly well-suited for use in audio amplifiers, switching applications, and general-purpose amplification. The 2SB817C-1E is known for its reliability, efficiency, and versatility, making it a popular choice among engineers and designers.

Key Specifications

- Type: The 2SB817C-1E is an NPN transistor, which means it conducts when a positive voltage is applied to its base relative to its emitter.
- Collector-Emitter Voltage (Vce): The maximum collector-emitter voltage is 50V, allowing it to handle a wide range of voltage applications.
- Collector Current (Ic): The maximum continuous collector current is 1.5A, making it suitable for applications requiring moderate current handling.
- Power Dissipation (Pd): The transistor has a maximum power dissipation of 1.5W, which indicates the amount of power it can safely dissipate without overheating.
- Current Gain (hFE): The DC current gain (hFE) ranges from 100 to 320 at a collector current of 150 mA, providing good amplification characteristics.
- Transition Frequency (fT): The transition frequency is approximately 100 MHz, which is important for high-frequency applications.
- Package Type: The 2SB817C-1E is available in a TO-220 package, which is designed for easy mounting and heat dissipation in various circuit designs.

Features and Benefits

The 2SB817C-1E comes with several features that enhance its performance and usability:

- High Reliability: Designed for robust performance, the transistor is built to withstand various environmental conditions, ensuring long-term reliability in applications.
- Low Saturation Voltage: The device features a low saturation voltage, which improves efficiency in switching applications by minimizing power loss.
- Fast Switching Speed: With a transition frequency of 100 MHz, the 2SB817C-1E is capable of fast switching, making it suitable for high-speed applications.
- Versatile Applications: The transistor can be used in a variety of applications, including audio amplifiers, power amplifiers, and switching circuits, providing flexibility for designers.

Typical Applications

The onsemi 2SB817C-1E is widely used in various applications, including:

- Audio Amplifiers: It is commonly found in audio amplifier circuits, where it amplifies audio signals for driving speakers and other audio components.
- Switching Applications: The transistor is suitable for use in switching circuits, such as relay drivers and motor control, where it can efficiently control larger loads.
- Signal Amplification: In general-purpose amplification applications, the 2SB817C-1E is used to amplify weak signals, ensuring reliable signal processing.
- Consumer Electronics: The device is utilized in various consumer electronic products, including televisions, radios, and other audio devices, where efficient amplification is required.

Conclusion

The onsemi 2SB817C-1E is a versatile and high-performance NPN transistor that meets the demands of modern electronic applications. With its robust specifications, including high voltage and current handling capabilities, low saturation voltage, and fast switching speed, it provides an excellent solution for designers looking to implement reliable amplification and switching in their circuits. Whether in audio applications, switching circuits, or consumer electronics, the 2SB817C-1E delivers dependable performance and flexibility for a wide range of uses.
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  • Customer Reviews
    4.95 out of 5.00 stars from 56 customer reviews from all over the world
    Hugo Fernández
    Spain
    5 stars
    2026-04-12 13:06
    Excellent product, very fast shipping indeed was amazed, 100% recommended…
    Sacha Rousseau
    France
    5 stars
    2026-04-12 09:18
    Product conforms to the announcement. Not tested yet
    Jessica Foster
    United States
    5 stars
    2026-04-12 03:07
    Thanks, fast shipping & delivery
    João Paulo Santos
    Brazil
    5 stars
    2026-04-12 02:08
    Excellent quality, very good
    Ricardo Fernández
    Spain
    5 stars
    2026-04-12 00:15
    Definitely, Suhms is the best supplier of components. I 've been working with them for several years and they 've never had a glitch. Thank you, SUHMS!.
    Katja Rinne
    Finland
    5 stars
    2026-04-11 21:42
    Not tested yet. Arrived in 21 days.