IRFZ46NSPBF
IRFZ46NSPBF
Discontinued
Description:  MOSFET N-CH 55V 53A D2PAK
Manufacturer:  Infineon Technologies
Datasheet:   IRFZ46NSPBF Datasheet
History Price: Discontinued at Digi-Key
In Stock: 9000
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IRFZ46NSPBF Specification
Specification
Mfr Part
IRFZ46NSPBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Series
HEXFET
Packaging
Tube
Status
Discontinued
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25℃
53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
?0V
Input Capacitance (Ciss) (Max) @ Vds
1696 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 107W (Tc)
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ46NSPBF PDF Datasheet
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IRFZ46NSPBF Description
Infineon Technologies IRFZ46NSPBF Overview

The IRFZ46NSPBF is a high-performance N-channel MOSFET from Infineon Technologies. It is designed for a wide variety of applications, including power electronics, automotive, and general-purpose switching. This MOSFET is optimized for low on-resistance (R\_DS(on)) and high current handling, making it suitable for efficient power conversion and amplification in modern systems.

Key Specifications:

* Drain-Source Voltage (V\_DSS): 55V
This specifies the maximum allowable voltage between the drain and source terminals of the MOSFET. The IRFZ46NSPBF has a 55V rating, which is ideal for many low-voltage power switching applications.

* Continuous Drain Current (I\_D): 78A
The MOSFET can carry a continuous drain current of up to 78A at 25°C, which ensures it can handle high current demands in circuits, improving power efficiency.

* Gate Threshold Voltage (V\_GS(th)): 2.0V to 4.0V
This indicates the voltage at which the MOSFET starts to turn on. A lower V\_GS(th) means the MOSFET is more sensitive to gate voltage changes, which allows for faster switching operations.

* Total Gate Charge (Q\_g): 120nC
The total gate charge represents the amount of charge required to switch the MOSFET on and off. The IRFZ46NSPBF has a relatively moderate gate charge, making it suitable for switching at higher frequencies without excessive gate drive losses.

* On-Resistance (R\_DS(on)): 0.022Ω
The on-resistance is one of the most critical parameters in MOSFET performance. A low R\_DS(on) reduces power loss during operation, leading to better efficiency. At 0.022Ω, the IRFZ46NSPBF performs well in power-sensitive applications.

* Package Type: TO-220
This is the package form of the IRFZ46NSPBF. The TO-220 package offers good thermal performance and allows the device to dissipate heat effectively when handling high currents.

* Power Dissipation (P\_D): 94W
The MOSFET can dissipate up to 94 watts of power, which is essential for preventing overheating and ensuring reliable long-term operation in high-power applications.

* Thermal Resistance (Junction-to-Case, R\_thJC): 1.3°C/W
This specifies the thermal resistance from the junction of the MOSFET to its case. A lower value indicates better thermal management and the ability to handle higher power levels without thermal failure.

* Operating Temperature Range: -55°C to 150°C
The wide temperature range makes this MOSFET suitable for both industrial and automotive applications, where temperature extremes are common.

* Gate-Source Voltage (V\_GS): ±20V
The maximum voltage that can be applied between the gate and source terminals is ±20V, providing flexibility in driving the MOSFET in different applications.

Applications:

1. Power Supply Systems: The low on-resistance and high current handling capabilities make this MOSFET ideal for use in power supply circuits such as DC-DC converters, where efficiency is critical.

2. Motor Control: The IRFZ46NSPBF is commonly used in motor control applications, where high efficiency and rapid switching are required.

3. Automotive Electronics: Given its high temperature rating and robust specifications, this MOSFET is widely used in automotive systems for power regulation and switching.

4. Lighting Systems: It can be used in both high-power and low-power lighting systems where switching efficiency is crucial.

5. High-Power Amplifiers: Its high current rating makes it suitable for use in power amplifiers, including audio amplification.

Advantages:

* High Efficiency: Due to its low R\_DS(on) and high current handling, the IRFZ46NSPBF minimizes power loss and improves efficiency in power electronics.
* Fast Switching: With moderate gate charge, this MOSFET can switch rapidly, making it suitable for high-frequency applications.
* Durability: The wide temperature range and high power dissipation capabilities ensure that the IRFZ46NSPBF performs well in harsh environments.
* Versatility: Its broad voltage, current, and temperature specifications make it adaptable for a wide range of applications.

In summary, the IRFZ46NSPBF is a robust and versatile N-channel MOSFET, providing high performance in demanding applications that require low power loss, high efficiency, and fast switching capabilities. Its wide voltage and temperature ratings make it an excellent choice for automotive, industrial, and power conversion systems.
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  • Customer Reviews
    4.95 out of 5.00 stars from 146 customer reviews from all over the world
    Johanna Meier
    Germany
    5 stars
    2026-04-04 12:56
    Fast shipping all super.
    Eliane
    Brazil
    5 stars
    2026-04-04 09:47
    Still not used, hope it is good.
    Gonzalo Ramírez
    Spain
    5 stars
    2026-04-04 08:57
    Articles are what they say they are. They're unproven since I 've ordered them to have in stock.
    The preparation and shipping was within a correct time frame.
    Transport in Spain by company CTT, NEFASTO. I had to leave because of an urgency w
    Daniel Costa Santos
    Brazil
    5 stars
    2026-04-04 02:50
    Accurate information, CI purchased and replaced with success.
    Alice
    Brazil
    5 stars
    2026-04-03 15:54
    Like the product
    Karla Jiménez
    Spain
    5 stars
    2026-04-03 09:23
    Sent combined, 2 things together in a bag, by registered mail with signature. The fairly fast delivery time 2-3 weeks to Barcelona, identical described, without testing seem of good quality, OK