Technical Parameter
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25℃
11A
Rds On (Max) @ Id, Vgs
14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25μA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1165pF @ 10V
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-PQFN (3.3x3.3), Power33
