Technical Parameter
FET Type
2 N-Channel (Dual), Schottky
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25℃
64A, 188A
Rds On (Max) @ Id, Vgs
3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 35μA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1314pF @ 13V
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TISON-8
