Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25℃
22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 30A
Vgs(th) (Max) @ Id
2.1V @ 25μA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1011 pF @ 13 V
Power Dissipation (Max)
3.5W (Ta), 27W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PQFN (5x6)
Package / Case
8-PowerTDFN
