IRF9910
IRF9910
Obsolete
Description:  MOSFET 2N-CH 20V 10A 8-SOIC
Manufacturer:  Infineon Technologies
Datasheet:   IRF9910 Datasheet
History Price: Obsolete
In Stock: 26000
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48000
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Apr 23, 2026
IRF9910 Specification
Specification
Mfr Part
IRF9910
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Infineon Technologies
Series
HEXFET
Packaging
Tube
Status
Obsolete
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25℃
10A, 12A
Rds On (Max) @ Id, Vgs
13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.55V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Power - Max
2W
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
IRF9910 PDF Datasheet
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IRF9910 Description
The Infineon Technologies IRF9910 is a high-performance N-channel MOSFET designed for a variety of applications, including power management, DC-DC converters, and motor control. This device is known for its low on-resistance, high-speed switching capabilities, and robust thermal performance, making it suitable for both consumer and industrial applications.

## Key Specifications:

1. Device Type:
- The IRF9910 is an N-channel MOSFET, which means it uses an N-type semiconductor for the channel, allowing for efficient conduction of current when a positive voltage is applied to the gate.

2. Maximum Drain-Source Voltage (V_DS):
- The IRF9910 has a maximum V_DS rating of 100V. This high voltage rating allows it to be used in applications that require significant voltage handling capabilities.

3. Continuous Drain Current (I_D):
- The device can handle a continuous drain current of up to 50A at a case temperature of 25°C. This high current capacity makes it suitable for applications requiring substantial power handling.

4. Pulsed Drain Current (I_D,pulse):
- The pulsed drain current rating is up to 160A. This feature is particularly useful in applications where short bursts of high current are required, such as in power supply circuits and motor drives.

5. On-Resistance (R_DS(on)):
- One of the standout features of the IRF9910 is its low on-resistance, typically around 8.0 mΩ at a gate-source voltage (V_GS) of 10V. This low R_DS(on) minimizes power losses during operation, enhancing overall efficiency.

6. Gate Threshold Voltage (V_GS(th)):
- The gate threshold voltage is specified between 2V and 4V. This means that the MOSFET will begin to conduct at relatively low gate voltages, making it suitable for low-voltage applications.

7. Total Gate Charge (Q_g):
- The total gate charge is approximately 60 nC at a V_GS of 10V. This low gate charge allows for faster switching speeds, which is essential in high-frequency applications.

8. Thermal Resistance:
- The thermal resistance from junction to case (RθJC) is typically around 1.0°C/W. This low thermal resistance helps in effective heat dissipation, allowing the device to operate efficiently at higher power levels.

9. Package Type:
- The IRF9910 is available in a TO-220 package, which provides good thermal performance and ease of mounting. The TO-220 package is widely used in power applications due to its robust design and ability to handle high currents.

10. Operating Temperature Range:
- The device is designed to operate in a wide temperature range, usually from -55°C to +170°C. This makes it suitable for use in various environments, including industrial settings where temperature fluctuations may occur.

11. Applications:
- The IRF9910 is widely used in various applications, including:
- Power management circuits
- DC-DC converters
- Motor drives
- LED drivers
- High-frequency switching applications
- Automotive applications

## Performance Characteristics:

- Switching Speed: The IRF9910 is designed for high-speed switching, making it ideal for applications that require rapid on/off control. Its low gate charge and fast recovery times contribute to its efficiency in switching applications.

- Thermal Performance: With its low thermal resistance and high current handling capabilities, the IRF9910 can operate efficiently in demanding environments. Proper heat sinking is recommended to maximize performance and reliability.

- Reliability: Infineon is known for producing high-quality semiconductor devices, and the IRF9910 is no exception. It is designed to meet rigorous industry standards, ensuring long-term reliability in various applications.

## Conclusion:

The Infineon Technologies IRF9910 N-channel MOSFET is a versatile and efficient device that meets the demands of modern power management and switching applications. With its high output power, low on-resistance, and excellent thermal performance, it is an excellent choice for engineers and designers looking to optimize their power circuits. Whether used in industrial automation, consumer electronics, or automotive applications, the IRF9910 provides the performance and reliability needed for effective power management solutions.
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  • Customer Reviews
    4.95 out of 5.00 stars from 116 customer reviews from all over the world
    Halina Jankowska
    Poland
    5 stars
    2026-04-14 03:26
    Fast shipping, OK
    Emil Kwiatkowski
    Poland
    5 stars
    2026-04-14 00:25
    Looks genuine. Have IR logo. Not tested yet.
    Gintaras Jonas
    Lithuania
    5 stars
    2026-04-13 20:38
    looks like not genuine
    Laura Ramirez
    United States
    5 stars
    2026-04-13 19:13
    Okay, according to the announcement.
    Valentina
    Spain
    5 stars
    2026-04-13 18:12
    Product good, as described.
    Éva Lefebvre
    France
    5 stars
    2026-04-13 17:07
    Very fast thank you