Technical Parameter
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25℃
8.9A
Rds On (Max) @ Id, Vgs
18.3mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 10V
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
