IRF8313PBF
IRF8313PBF
Discontinued
Description:  MOSFET 2N-CH 30V 9.7A 8-SOIC
Manufacturer:  Infineon Technologies
Datasheet:   IRF8313PBF Datasheet
History Price: Discontinued at Digi-Key
In Stock: 34000
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32000
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Apr 22, 2026
IRF8313PBF Specification
Specification
Mfr Part
IRF8313PBF
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Infineon Technologies
Series
-
Packaging
Tube
Status
Discontinued
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25℃
9.7A
Rds On (Max) @ Id, Vgs
15.5mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25μA
Gate Charge (Qg) (Max) @ Vgs
90nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 15V
Power - Max
2W
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
IRF8313PBF PDF Datasheet
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IRF8313PBF Description
The Infineon Technologies IRF8313PBF is a high-performance N-channel MOSFET designed for various applications, including power management, motor control, and other high-efficiency switching applications. Below is a detailed overview of its specifications, features, and typical applications.

## Overview

The IRF8313PBF is part of Infineon%27s family of power MOSFETs, which are known for their low on-resistance, high-speed switching capabilities, and robust thermal performance. This device is particularly suitable for applications that require efficient power conversion and management.

## Key Specifications

1. Type: N-channel MOSFET
2. Package: TO-220
3. Maximum Drain-Source Voltage (V_DS): 30V
4. Maximum Gate-Source Voltage (V_GS): ±20V
5. Continuous Drain Current (I_D):
- At 25°C: 60A
- At 100°C: 40A
6. Pulsed Drain Current (I_D, pulsed): 120A
7. On-Resistance (R_DS(on)):
- At V_GS = 10V: 0.025Ω
- At V_GS = 4.5V: 0.035Ω
8. Total Gate Charge (Q_g):
- At V_GS = 10V: 40nC
9. Gate Threshold Voltage (V_GS(th)):
- Minimum: 2V
- Maximum: 4V
10. Thermal Resistance, Junction-to-Case (RθJC): 3°C/W
11. Thermal Resistance, Junction-to-Ambient (RθJA): 62°C/W
12. Operating Temperature Range: -55°C to +150°C

## Features

- Low On-Resistance: The IRF8313PBF features a low R_DS(on), which minimizes conduction losses and improves overall efficiency in power applications.
- High-Speed Switching: The device is designed for fast switching, making it suitable for high-frequency applications.
- Robust Thermal Performance: With a high maximum junction temperature and low thermal resistance, the IRF8313PBF can handle significant power levels without overheating.
- Easy to Drive: The gate charge characteristics allow for easy interfacing with standard gate drivers, making it suitable for various control schemes.

## Applications

The IRF8313PBF is widely used in various applications, including:

- Power Supply Circuits: Ideal for use in DC-DC converters, switch-mode power supplies (SMPS), and other power management systems.
- Motor Control: Suitable for driving DC motors, brushless DC motors, and other inductive loads.
- Battery Management Systems: Used in applications requiring efficient power switching and management, such as battery chargers and protection circuits.
- Automotive Applications: Can be utilized in electric vehicles and hybrid systems for power distribution and management.

## Conclusion

The Infineon Technologies IRF8313PBF is a versatile and efficient N-channel MOSFET that meets the demands of modern power electronics applications. Its combination of low on-resistance, high-speed switching, and robust thermal performance makes it an excellent choice for engineers looking to design efficient and reliable power management solutions. Whether in consumer electronics, automotive, or industrial applications, the IRF8313PBF provides the performance and reliability needed for today%27s demanding environments.
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  • Customer Reviews
    4.95 out of 5.00 stars from 96 customer reviews from all over the world
    Halina Jankowska
    Poland
    5 stars
    2026-04-14 03:26
    Fast shipping, OK
    Emil Kwiatkowski
    Poland
    5 stars
    2026-04-14 00:25
    Looks genuine. Have IR logo. Not tested yet.
    Gintaras Jonas
    Lithuania
    5 stars
    2026-04-13 20:38
    looks like not genuine
    Laura Ramirez
    United States
    5 stars
    2026-04-13 19:13
    Okay, according to the announcement.
    Valentina
    Spain
    5 stars
    2026-04-13 18:12
    Product good, as described.
    Éva Lefebvre
    France
    5 stars
    2026-04-13 17:07
    Very fast thank you