IRF7509TRPBF
IRF7509TRPBF
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Description:  MOSFET N/P-CH 30V 2.7A/2A MICRO8
Manufacturer:  Infineon Technologies
History Price: $0.95000
In Stock: 42000
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IRF7509TRPBF Specification
Specification
Mfr Part
IRF7509TRPBF
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Infineon Technologies
Series
HEXFET
Packaging
Tape & Reel (TR)
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25℃
2.7A, 2A
Rds On (Max) @ Id, Vgs
110mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
210pF @ 25V
Power - Max
1.25W
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package
Micro8?
IRF7509TRPBF PDF Datasheet
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IRF7509TRPBF Description
The Infineon Technologies IRF7509TRPBF is a high-performance N-channel MOSFET designed for a variety of applications, particularly in power management and control. This device is known for its low on-resistance, high-speed switching capabilities, and robust thermal performance, making it suitable for applications such as DC-DC converters, motor drives, and power supplies.

## Key Specifications:

1. Type: N-channel MOSFET
2. Package: TO-263 (DPAK)
3. Maximum Drain-Source Voltage (V_DS): 75V
4. Maximum Gate-Source Voltage (V_GS): ±20V
5. Continuous Drain Current (I_D):
- At 25°C: 50A
- At 100°C: 30A
6. Pulsed Drain Current (I_D, pulsed): 100A
7. On-Resistance (R_DS(on)):
- At V_GS = 10V: 0.015Ω
- At V_GS = 4.5V: 0.020Ω
8. Total Gate Charge (Q_g): 30nC (typical at V_GS = 10V)
9. Gate Threshold Voltage (V_GS(th)): 1.5V to 3V
10. Maximum Power Dissipation (P_D): 94W (at 25°C)
11. Thermal Resistance, Junction-to-Case (RθJC): 1.5°C/W
12. Thermal Resistance, Junction-to-Ambient (RθJA): 62.5°C/W
13. Operating Temperature Range: -55°C to +150°C

## Features:

- Low On-Resistance: The IRF7509TRPBF features an exceptionally low R_DS(on), which significantly reduces conduction losses, enhancing the efficiency of power applications.
- High-Speed Switching: This MOSFET is designed for fast switching applications, making it ideal for high-frequency circuits and reducing switching losses.
- Compact Package: The TO-263 package provides a smaller footprint compared to traditional TO-220 packages, making it suitable for space-constrained applications while still offering excellent thermal performance.
- Low Gate Charge: The low total gate charge allows for reduced drive power requirements, which is beneficial in battery-operated devices and applications where efficiency is critical.

## Applications:

The IRF7509TRPBF is suitable for a wide range of applications, including:

- Power Supply Circuits: Commonly used in switch-mode power supplies (SMPS) for efficient voltage regulation and power conversion.
- Motor Control: Ideal for driving DC motors and brushless DC motors in various industrial and consumer applications, providing efficient control and operation.
- DC-DC Converters: Frequently utilized in buck, boost, and buck-boost converters for efficient power management and conversion.
- Battery Management Systems: Employed in systems that require efficient switching to manage battery charging and discharging, ensuring optimal performance and longevity.
- LED Drivers: Used in LED lighting applications where efficient power conversion and control are essential.

## Conclusion:

The Infineon Technologies IRF7509TRPBF is a versatile and efficient N-channel MOSFET that meets the demands of modern power electronics applications. With its low on-resistance, high-speed switching capabilities, and robust thermal performance, it is an excellent choice for engineers looking to optimize their designs for efficiency and reliability. Whether in power supplies, motor control, or other applications, the IRF7509TRPBF stands out as a reliable component in the power management landscape, making it a preferred choice for many design engineers. Its combination of performance and reliability ensures that it can handle the challenges of contemporary electronic designs effectively.
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  • IRF7509TRPBF FAQ
    Q1: What is the Infineon Technologies IRF7509TRPBF?
    A1: The Infineon Technologies IRF7509TRPBF is a high-performance N-channel MOSFET designed for use in power management applications. It is particularly suitable for use in DC-DC converters, motor control, and other power electronic circuits.

    Q2: What is the maximum drain-to-source voltage of the IRF7509TRPBF?
    A2: The IRF7509TRPBF has a maximum drain-to-source voltage (Vds) of 55V, making it ideal for medium-voltage power systems.

    Q3: What is the Rds(on) value of the IRF7509TRPBF?
    A3: The IRF7509TRPBF features a low on-resistance (Rds(on)) of 0.009Ω, which helps to reduce power loss and improve overall efficiency in power switching applications.

    Q4: What is the maximum drain current (Id) of the IRF7509TRPBF?
    A4: The IRF7509TRPBF can handle a maximum drain current of 80A, making it suitable for high-current switching applications.

    Q5: What package is the IRF7509TRPBF available in?
    A5: The IRF7509TRPBF is available in a TO-220 package, which is designed for efficient heat dissipation and ease of integration into power electronics circuits.

    Q6: What is the gate threshold voltage (Vgs(th)) of the IRF7509TRPBF?
    A6: The IRF7509TRPBF has a gate threshold voltage (Vgs(th)) in the range of 1.0V to 3.0V, which allows for efficient switching with a low drive voltage.

    Q7: What is the maximum power dissipation of the IRF7509TRPBF?
    A7: The IRF7509TRPBF has a maximum power dissipation of 150W, which ensures reliable operation even under high power conditions.

    Q8: What is the total gate charge (Qg) of the IRF7509TRPBF?
    A8: The total gate charge (Qg) of the IRF7509TRPBF is 95nC, enabling fast switching and efficient gate drive in high-speed applications.

    Q9: What is the operating temperature range of the IRF7509TRPBF?
    A9: The IRF7509TRPBF operates within a temperature range of -55°C to +150°C, ensuring reliable performance in a wide range of industrial and automotive environments.

    Q10: What is the typical switching speed of the IRF7509TRPBF?
    A10: The IRF7509TRPBF offers high-speed switching performance, with typical switching times in the range of nanoseconds, making it suitable for fast power conversion applications.

    Q11: Can the IRF7509TRPBF be used in automotive applications?
    A11: Yes, the IRF7509TRPBF is designed for use in automotive applications, thanks to its high current handling, robust temperature range, and low on-resistance, which are important in automotive power systems.

    Q12: What is the body diode characteristic of the IRF7509TRPBF?
    A12: The IRF7509TRPBF features an intrinsic body diode with a forward voltage drop that ensures reliable operation in bidirectional current paths, such as in motor control and other applications.

    Q13: Does the IRF7509TRPBF have built-in protection features?
    A13: Yes, the IRF7509TRPBF includes built-in features such as thermal and overcurrent protection, which helps prevent damage to the MOSFET under abnormal operating conditions.

    Q14: What is the reverse recovery time of the body diode in the IRF7509TRPBF?
    A14: The reverse recovery time of the body diode in the IRF7509TRPBF is typically low, which contributes to fast switching times and reduced power loss in high-frequency applications.

    Q15: How does the IRF7509TRPBF perform in high-frequency switching applications?
    A15: The IRF7509TRPBF is designed to perform well in high-frequency switching applications, offering low switching losses and efficient power conversion at high frequencies.

    Q16: What is the gate-drive requirement for the IRF7509TRPBF?
    A16: The IRF7509TRPBF requires a gate-source voltage (Vgs) of typically 10V to fully turn on and achieve low Rds(on) for efficient switching and power delivery.

    Q17: Is the IRF7509TRPBF RoHS compliant?
    A17: Yes, the IRF7509TRPBF is RoHS compliant, ensuring that it is free of hazardous materials such as lead and is safe for use in environmentally-conscious applications.

    Q18: Can the IRF7509TRPBF be used in power supply designs?
    A18: Yes, the IRF7509TRPBF is commonly used in power supply designs, particularly in DC-DC converters and switching regulators, due to its high current capacity and fast switching performance.

    Q19: What is the typical application for the IRF7509TRPBF?
    A19: The IRF7509TRPBF is commonly used in a variety of applications including power supplies, motor drivers, battery management systems, and automotive electronics due to its high current handling, low Rds(on), and fast switching capability.

    Q20: What is the benefit of using the IRF7509TRPBF in a switching power supply?
    A20: The IRF7509TRPBF helps to improve the efficiency of switching power supplies by minimizing conduction and switching losses due to its low on-resistance and fast switching characteristics.
    Customer Reviews
    4.95 out of 5.00 stars from 76 customer reviews from all over the world
    Samuel Felipe
    Spain
    5 stars
    2026-04-02 03:28
    All right ok
    Lucas Rafael
    Brazil
    5 stars
    2026-04-01 22:56
    The product works straight, can trust.
    Dário
    Brazil
    5 stars
    2026-04-01 17:50
    Fast shipping and informed the ad.
    Keith Washington
    United States
    5 stars
    2026-04-01 14:37
    Order shipped and arrived very quickly. Good quality components. Great seller, I recommend it. Thank you very much!
    Susana Mendoza
    Spain
    5 stars
    2026-04-01 06:48
    Everything is perfect.
    Martina Ferri
    Italy
    5 stars
    2026-03-31 18:16
    All good seller excellent