Technical Parameter
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25℃
5.1A
Rds On (Max) @ Id, Vgs
50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
780pF @ 25V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
