Technical Parameter
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25℃
5.2A
Rds On (Max) @ Id, Vgs
58mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs
29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
913pF @ 15V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
