The onsemi FDY3000NZ is an N-channel enhancement-mode power MOSFET designed for high-efficiency switching and low conduction loss in low-voltage applications. It is optimized for synchronous rectification, DC-DC conversion, motor drive, and general-purpose switching circuits. The device offers low on-resistance, high current handling, and fast switching characteristics, providing superior performance in high-frequency applications. The FDY3000NZ is packaged in a compact D2PAK-7L surface-mount package, allowing for effective heat dissipation and integration in high-density PCB layouts. Its rugged design ensures reliable operation under demanding thermal and electrical conditions.

## Key Features

* N-channel MOSFET for low-voltage, high-efficiency applications.
* Continuous drain current (ID) up to 70 A at 25°C.
* Low on-resistance (RDS(on)) 3.5 mΩ typical at VGS = 10 V, ID = 35 A.
* Fast switching characteristics for high-frequency operation.
* Low gate charge (Qg) 230 nC typical, reducing switching losses.
* Maximum drain-to-source voltage (VDS) 30 V.
* High pulsed drain current capability (IDM) up to 280 A.
* High-temperature operation: junction temperature (TJ) up to 150°C.
* Avalanche-rated for robustness under inductive load conditions.
* Pb-free, RoHS-compliant package suitable for automated assembly.
* Optimized for synchronous rectification, DC-DC converters, power management circuits, and low-voltage motor drives.

## Electrical Characteristics

* Drain-to-Source Voltage (VDS): 30 V maximum.
* Continuous Drain Current (ID): 70 A at 25°C, 56 A at 100°C.
* Pulsed Drain Current (IDM): 280 A.
* Gate-to-Source Voltage (VGS): ±20 V maximum.
* Static Drain-to-Source On-Resistance (RDS(on)): 3.5 mΩ typical at VGS = 10 V, ID = 35 A.
* Forward Transconductance (gFS): 100 S typical at VDS = 15 V, ID = 35 A.
* Gate Threshold Voltage (VGS(th)): 1.0 V minimum, 2.5 V maximum at ID = 5 A, VDS = VGS.
* Input Capacitance (Ciss): 5,700 pF typical.
* Output Capacitance (Coss): 2,100 pF typical.
* Reverse Transfer Capacitance (Crss): 250 pF typical.
* Total Gate Charge (Qg): 230 nC typical at VDS = 30 V, VGS = 10 V.
* Gate-to-Source Charge (Qgs): 45 nC typical.
* Gate-to-Drain Charge (Qgd): 50 nC typical.
* Drain-to-Source Leakage Current (IDSS): 20 μA maximum at VDS = 30 V, VGS = 0 V.
* Forward Diode Voltage (VSD): 0.95 V typical at IS = 35 A.

## Switching and Performance Characteristics

* Fast rise time (tr) 17 ns and fall time (tf) 20 ns typical at VDS = 15 V, ID = 35 A, VGS = 10 V.
* Low gate charge allows for reduced switching losses in high-frequency operation.
* Optimized for synchronous rectification in power converters due to low RDS(on) and fast recovery.
* Avalanche-rated with single-pulse energy (EAS) of 100 mJ, providing robustness in inductive load applications.
* Low input capacitance enables efficient driving with logic-level gate signals or driver ICs.
* Minimal gate-to-drain charge ensures low Miller effect, improving high-speed switching performance.

## Thermal and Environmental Characteristics

* Operating Junction Temperature (TJ): −55°C to +150°C.
* Storage Temperature (Tstg): −55°C to +150°C.
* Thermal Resistance Junction-to-Ambient (RθJA): 30°C/W typical, improved with PCB copper area.
* Thermal Resistance Junction-to-Case (RθJC): 1.5°C/W typical.
* Efficient thermal performance allows high-current operation without exceeding safe junction temperature.
* Package optimized for thermal dissipation, ensuring reliable operation under continuous and pulsed current loads.

## Package Information

* Package Type: D2PAK-7L (surface-mount), compact and thermally efficient.
* Pin Configuration:

* Pin 1: Gate
* Pin 2–3: Drain
* Pin 4: Source
* Additional pins connected internally for thermal and electrical optimization.
* Lead Finish: RoHS-compliant, Pb-free, compatible with standard reflow soldering processes.
* Package allows high-density PCB layouts and integration with high-power modules.

## Protection and Control Features

* Avalanche-rated for single-pulse energy handling in inductive switching applications.
* Low gate charge and low on-resistance reduce conduction and switching losses, protecting the device from thermal overstress.
* Designed to withstand high di/dt during fast switching transitions, enhancing reliability.
* Gate-source voltage rating ±20 V protects against overdriving from driver circuits.
* Internal structure optimized for low leakage and consistent operation across temperature range.

## Applications

* Synchronous rectifiers in low-voltage DC-DC converters and power supply circuits.
* High-current motor drives and switching circuits.
* Battery-powered systems requiring low conduction loss and high efficiency.
* Low-voltage power management for consumer electronics and computing systems.
* Inductive load switching, including solenoids, relays, and LED drivers.
* Compact, high-current PCB designs where thermal management and switching efficiency are critical.

## Reliability and Performance Summary

The onsemi FDY3000NZ is a high-performance, low-voltage N-channel MOSFET engineered for efficient power switching and low conduction loss in compact applications. Its low on-resistance, low gate charge, and fast switching enable high-efficiency operation in synchronous rectifiers, DC-DC converters, and motor control circuits. Avalanche rating and robust thermal characteristics ensure reliable performance under inductive loads and high current pulses. The compact D2PAK-7L package provides effective heat dissipation and facilitates high-density PCB integration. The FDY3000NZ is well-suited for industrial, automotive, and consumer electronics applications demanding efficient, reliable, and high-current MOSFET performance.