CSD18541F5T
CSD18541F5T
Active
Description:  MOSFET N-CH 60V 2.2A 3PICOSTAR
Manufacturer:  Texas Instruments
Datasheet:   CSD18541F5T Datasheet
History Price: $0.96000
In Stock: 43950
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CSD18541F5T Specification
Specification
Mfr Part
CSD18541F5T
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Texas Instruments
Series
FemtoFET
Packaging
Tape & Reel (TR)
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25℃
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
65mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
?0V
Input Capacitance (Ciss) (Max) @ Vds
777 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PICOSTAR
Package / Case
3-SMD, No Lead
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CSD18541F5T Description

## Overview of Texas Instruments CSD18541F5T

The Texas Instruments CSD18541F5T is a dual N-channel MOSFET designed for high-efficiency power conversion in various applications. It is specifically engineered for DC-DC converters, motor drives, power management systems, and battery-operated devices. This MOSFET offers low on-resistance, high current handling, and fast switching capabilities, making it a versatile choice for systems requiring high efficiency and low power losses. It is a critical component for improving system performance in power electronics, automotive, and consumer electronics applications.

## Key Features of CSD18541F5T

* Dual N-Channel MOSFET: The CSD18541F5T integrates two N-channel MOSFETs in a single package, providing cost savings and simplifying circuit design.
* Low On-Resistance (Rds(on)): With a typical Rds(on) of 5.4mΩ at Vgs = 10V, the device minimizes conduction losses, enhancing overall system efficiency, especially in high-current applications.
* High Current Rating: The MOSFET can handle a continuous drain current of 100A, making it suitable for high-power applications.
* Fast Switching Speed: The CSD18541F5T features fast switching speeds, with a typical Qgd (gate charge) of 23nC and Qg (total gate charge) of 64nC, which reduces switching losses and improves efficiency in fast-switching applications.
* Low Gate Drive Requirement: The device is optimized for low gate charge, meaning it requires less drive power for switching, resulting in more efficient and cost-effective designs.
* Low Capacitance: The Ciss (input capacitance) is typically 4200pF, which helps to reduce the switching losses and improve the overall power conversion efficiency in high-frequency applications.
* Thermal Performance: The CSD18541F5T is designed to operate at higher temperatures with low thermal resistance, helping to dissipate heat more effectively and ensuring the device performs reliably in high-power systems.
* Optimized for Synchronous Rectification: This MOSFET is ideal for use in synchronous rectification circuits, which are commonly used in DC-DC converters to enhance efficiency by reducing power dissipation.

## Applications of CSD18541F5T

The CSD18541F5T is used in a broad range of applications where high efficiency and power management are critical:

* DC-DC Converters: Ideal for use in buck, boost, and buck-boost converters in power supplies for industrial, telecommunications, and consumer electronics.
* Motor Drives: Commonly used in brushless DC (BLDC) motors, servo motors, and stepper motors, where efficient power conversion is essential.
* Battery Management Systems (BMS): Used in battery-powered devices like electric vehicles (EVs) and uninterruptible power supplies (UPS), where high efficiency can extend battery life.
* Power Management Systems: Excellent for power distribution and power management ICs, particularly where space constraints and efficiency are key factors.
* Automotive Electronics: Commonly found in automotive power electronics, including electric power steering (EPS) and inverter circuits for electric vehicles.
* Consumer Electronics: Found in gaming consoles, high-performance laptops, and smartphones, where fast switching and low power consumption are crucial for maintaining long battery life.

## Specifications of CSD18541F5T

* Device Type: Dual N-channel MOSFET
* Drain-Source Voltage (Vds): 40V
* Continuous Drain Current (Id): 100A
* Gate Threshold Voltage (Vgs(th)): 1.0V to 3.0V
* On-Resistance (Rds(on)): 5.4mΩ (typical) at Vgs = 10V
* Gate Charge (Qg): 64nC (typical)
* Gate-Drain Charge (Qgd): 23nC (typical)
* Input Capacitance (Ciss): 4200pF (typical)
* Output Capacitance (Coss): 180pF (typical)
* Thermal Resistance (RθJC): 1.5°C/W (junction-to-case)
* Package Type: 5mm x 6mm, Power QFN (Quad Flat No-lead) package
* Operating Temperature Range: -55°C to +150°C
* Peak Pulsed Drain Current: 200A (maximum)
* Gate Drive Requirements: Low gate charge, optimized for high-speed switching

## Performance Characteristics

* Low Conduction Losses: With its low Rds(on), the CSD18541F5T minimizes conduction losses, making it ideal for high-current, low-voltage applications where efficiency is critical.
* Fast Switching: The device's low total gate charge and fast switching times make it suitable for applications requiring high-frequency switching, such as DC-DC converters and motor control circuits.
* Efficient Thermal Management: The MOSFET is designed with low thermal resistance, ensuring it can handle high power without excessive temperature rise. This reduces the need for additional thermal management solutions.
* Reliable Operation in High-Temperature Environments: The device’s wide operating temperature range of -55°C to +150°C ensures it can be used in demanding environments, including automotive and industrial applications, where temperature stability is important.
* Low Switching Losses: The low capacitance of the device helps reduce switching losses, contributing to overall system efficiency. This makes the device suitable for high-speed switching applications, such as in synchronous rectification in DC-DC converters.

## Advantages of CSD18541F5T

* High Efficiency: The low Rds(on) and low switching losses make the CSD18541F5T highly efficient, which is crucial for power conversion applications in a wide variety of industries.
* Versatile Performance: With a wide range of operating conditions, including high continuous drain current and low on-resistance, the CSD18541F5T can be used in a variety of applications, from automotive to consumer electronics.
* Compact Package: The 5mm x 6mm Power QFN package is compact and allows for space-saving designs, which is especially important in modern power systems with limited PCB real estate.
* Robust Protection: With its ability to handle large currents and its low thermal resistance, the CSD18541F5T provides robust protection against overheating and overcurrent, ensuring long-term reliability in demanding applications.
* Fast Switching: The device’s fast switching performance ensures that it can handle high-frequency signals, making it ideal for modern power electronics requiring high-speed operation.

## Conclusion

The Texas Instruments CSD18541F5T is a high-performance, low-resistance dual N-channel MOSFET that excels in a variety of high-efficiency, high-current power conversion applications. Its low Rds(on), fast switching capabilities, and efficient thermal management make it a highly reliable choice for DC-DC converters, motor drives, battery management systems, and automotive electronics. With a compact QFN package, low gate charge, and wide temperature range, the CSD18541F5T is an excellent choice for applications where space, efficiency, and power management are critical.
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  • Customer Reviews
    4.95 out of 5.00 stars from 86 customer reviews from all over the world
    Ana Paula
    Brazil
    5 stars
    2026-04-08 22:40
    Okay okay description confirm!
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    Brazil
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    Arrived very fast, apparently product quality
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    Still not tested for check
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    United States
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    Spain
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