CSD18534Q5AT
CSD18534Q5AT
Active
Description:  MOSFET N-CHANNEL 60V 50A 8VSON
Manufacturer:  Texas Instruments
History Price: $1.64000
In Stock: 30300
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CSD18534Q5AT Specification
Specification
Mfr Part
CSD18534Q5AT
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Texas Instruments
Series
NexFET
Packaging
Tape & Reel (TR)
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25℃
50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
11.1 nC @ 4.5 V
Vgs (Max)
?0V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 77W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-VSONP (5x6)
Package / Case
8-PowerTDFN
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CSD18534Q5AT Description
The Texas Instruments CSD18534Q5AT is a highly efficient, high-performance N-channel MOSFET designed for power management applications. It belongs to the family of NexFET™ power MOSFETs, which are known for their advanced design and superior efficiency. This component is particularly well-suited for use in applications requiring high-frequency switching and low-loss operation, such as in power supplies, DC-DC converters, and motor control systems. Below is a detailed overview of the CSD18534Q5AT, highlighting its features, specifications, and capabilities.

## Overview of the CSD18534Q5AT

The CSD18534Q5AT is a 30V N-channel MOSFET featuring an advanced process technology that provides a high level of performance in terms of both switching speed and efficiency. The device offers a low on-resistance (Rds(on)) and very low gate charge, making it ideal for use in high-performance power management systems. It is housed in a compact, surface-mount QFN package, allowing for efficient thermal dissipation and small PCB footprints.

## Key Features

* Low On-Resistance (Rds(on)): One of the standout features of the CSD18534Q5AT is its low on-resistance, which minimizes conduction losses during operation. This is crucial for improving overall system efficiency, especially in high-current applications.

* Low Gate Charge: The device has a low gate charge (Qg), which contributes to fast switching speeds and reduces the power required to drive the gate. This is beneficial in high-frequency switching applications such as DC-DC converters and motor drives.

* High Efficiency: Thanks to its advanced design, the MOSFET offers excellent efficiency in both the conduction and switching phases. The combination of low Rds(on) and low gate charge ensures that power losses are minimized, enabling efficient operation even at high frequencies.

* High-Speed Switching: With fast switching characteristics, the CSD18534Q5AT is optimized for high-frequency applications. This makes it ideal for use in systems where speed is critical, such as in power supplies, buck/boost converters, and inverters.

* Thermal Performance: The device is housed in a QFN package, which provides excellent thermal dissipation. This allows for reliable operation even under high load conditions. Additionally, its low Rds(on) reduces the heat generated during operation, further enhancing thermal performance.

* Low Gate Drive Power: The low gate charge enables the MOSFET to be driven with low power, which is a key feature for reducing overall system power consumption.

* Pb-Free and RoHS Compliant: The CSD18534Q5AT is lead-free and complies with RoHS regulations, making it suitable for environmentally conscious designs.

## Specifications

* Drain-to-Source Voltage (Vds):

* Maximum Vds: 30V
* The MOSFET is designed for low-voltage applications, making it ideal for systems that operate at lower supply voltages.

* Gate-to-Source Voltage (Vgs):

* Maximum Vgs: ±20V
* This ensures the MOSFET can be controlled efficiently with standard gate drivers.

* Continuous Drain Current (Id):

* Maximum Id: 80A (at 25°C, with appropriate cooling)
* This high current capability makes the device suitable for power-hungry applications that require significant current handling capacity.

* On-Resistance (Rds(on)):

* Maximum Rds(on): 2.3 mΩ at Vgs = 10V
* The low on-resistance ensures minimal power loss during conduction, contributing to overall system efficiency.

* Gate Charge (Qg):

* Total Gate Charge: 12.9 nC (at Vgs = 10V)
* Low gate charge allows for faster switching speeds, making the device suitable for high-frequency switching applications.

* Total Gate-to-Source Charge (Qgs):

* Qgs: 3.7 nC
* The low charge helps to reduce the switching energy required to operate the MOSFET.

* Thermal Resistance (Junction-to-Case):

* Junction-to-case thermal resistance (RθJC): 1.5°C/W
* This low thermal resistance allows for efficient heat dissipation and helps the device maintain reliable performance under load.

* Package Type:

* Package: QFN-5x6 (QFN-20) with a 5mm x 6mm footprint
* The compact QFN package offers easy integration into space-constrained designs and supports efficient thermal dissipation.

* Operating Temperature Range:

* Junction temperature (Tj): -55°C to +150°C
* This wide operating temperature range ensures the device can perform reliably in harsh environments.

* Reverse Drain-Source Avalanche Energy (EAS):

* EAS: 400 mJ
* The device can handle energy transients due to its robust construction, making it resilient in high-voltage and high-current switching environments.

## Applications

The CSD18534Q5AT is ideal for a variety of high-performance power management applications, including:

* DC-DC Converters: Used in both buck and boost converters for efficient voltage regulation, particularly in low-voltage applications.

* Motor Drives: The fast switching characteristics and low losses make it suitable for driving motors in automotive, industrial, and robotics applications.

* Power Supplies: Provides efficient power switching for power supplies in servers, desktop computers, and other systems that require high-efficiency conversion.

* Battery-Powered Systems: The low gate charge and high efficiency make it ideal for use in battery-powered systems, where minimizing power loss is critical for prolonging battery life.

* Inverters: Suitable for use in inverters for renewable energy systems, such as solar and wind energy, where efficient power conversion is essential.

* LED Drivers: Can be used in LED driving circuits where efficiency and reliability are crucial.

## Conclusion

The Texas Instruments CSD18534Q5AT is a versatile and high-performance N-channel MOSFET that excels in low-voltage, high-frequency power management applications. Its low on-resistance, low gate charge, and excellent thermal performance make it an ideal choice for efficient power conversion in systems such as DC-DC converters, motor drives, and power supplies. With its high current handling capability, robust protection features, and compact QFN package, the CSD18534Q5AT offers a reliable and efficient solution for demanding power management applications.
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  • Customer Reviews
    4.95 out of 5.00 stars from 76 customer reviews from all over the world
    Ana Paula
    Brazil
    5 stars
    2026-04-08 22:40
    Okay okay description confirm!
    Ana Clara Lima
    Brazil
    5 stars
    2026-04-08 22:22
    Arrived very fast, apparently product quality
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    Brazil
    5 stars
    2026-04-08 13:14
    Still not tested for check
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    Brazil
    5 stars
    2026-04-08 02:44
    Thanks for the product
    Donald Simmons
    United States
    5 stars
    2026-04-08 02:02
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    Nicolás
    Spain
    5 stars
    2026-04-08 00:49
    All right. Fast Shipping. Thank you