CSD18532NQ5B
CSD18532NQ5B
Active
Description:  MOSFET N-CH 60V 22A/100A 8VSON
Manufacturer:  Texas Instruments
History Price: $2.60000
In Stock: 20850
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CSD18532NQ5B Specification
Specification
Mfr Part
CSD18532NQ5B
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Texas Instruments
Series
NexFET
Packaging
Tape & Reel (TR)
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25℃
22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
?0V
Input Capacitance (Ciss) (Max) @ Vds
5340 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3.2W (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-VSON-CLIP (5x6)
Package / Case
8-PowerTDFN
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CSD18532NQ5B Description
Overview of Texas Instruments CSD18532NQ5B

The Texas Instruments CSD18532NQ5B is a high-performance N-channel MOSFET designed for use in various power management applications, including DC-DC converters, synchronous rectification, and motor control. This device is notable for its low on-resistance and fast switching capabilities, which contribute to improved efficiency and thermal performance in power electronics systems. The CSD18532NQ5B is particularly well-suited for applications requiring high efficiency and compact design.

Key Specifications

- Type: N-channel MOSFET
- Maximum Drain-Source Voltage (Vds): The CSD18532NQ5B has a maximum Vds rating of 30 V, making it suitable for low-voltage applications.

- Continuous Drain Current (Id): The device can handle a continuous drain current of up to 80 A at a case temperature of 25°C. This high current capability allows it to be used in demanding power applications.

- On-Resistance (Rds(on)): The typical on-resistance is as low as 4.5 mΩ at a gate-source voltage (Vgs) of 10 V. This low Rds(on) minimizes conduction losses and enhances overall efficiency.

- Gate Threshold Voltage (Vgs(th)): The gate threshold voltage ranges from 1.2 V to 2.5 V, allowing the MOSFET to be driven effectively with standard logic-level signals.

- Total Gate Charge (Qg): The total gate charge is approximately 20 nC at Vgs = 10 V, which contributes to faster switching speeds and reduced driver power requirements.

Key Features

- Low Switching Losses: The CSD18532NQ5B is designed with optimized switching characteristics that result in lower switching losses during operation, making it ideal for high-frequency applications.

- Thermal Performance: With a maximum junction temperature rating of up to 150°C, the device can operate reliably under high-temperature conditions. Its package design also facilitates effective heat dissipation.

- Compact Package: Housed in a compact QFN package (5 mm x 6 mm), the CSD18532NQ5B enables designers to save space on PCBs while maintaining performance standards.

- Robustness: The device features built-in ESD protection and is designed to withstand harsh operating conditions, enhancing reliability in end applications.

Applications

The versatility of the CSD18532NQ5B allows it to be utilized across various applications:

- DC-DC Converters: Its low on-resistance and fast switching capabilities make it ideal for synchronous buck converters where efficiency is critical.

- Power Management Systems: The MOSFET can be used in power distribution systems within consumer electronics, telecommunications equipment, and industrial automation.

- Motor Control Applications: With its ability to handle high currents and fast switching times, the CSD18532NQ5B is suitable for driving motors in robotics and automotive applications.

- Battery Management Systems: Its low on-resistance helps improve efficiency in battery charging circuits while minimizing heat generation.

Conclusion

In summary, the Texas Instruments CSD18532NQ5B N-channel MOSFET stands out as a highly efficient component tailored for modern power management solutions. With impressive specifications such as low on-resistance, high continuous drain current capacity, and robust thermal performance, this device meets the needs of engineers designing high-performance electronic systems. Its adaptability across various applications—from DC-DC converters to motor control—makes it an essential choice for designers looking to enhance their power electronics with reliable and efficient components. As technology continues to advance towards greater efficiency and miniaturization, the CSD18532NQ5B remains a key player in achieving these goals within the industry.
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  • Customer Reviews
    4.95 out of 5.00 stars from 146 customer reviews from all over the world
    Mariana Núñez
    Spain
    5 stars
    2026-04-11 01:31
    Great seller, fast delivery and excellent communication.
    Romain Bernard
    France
    5 stars
    2026-04-10 23:58
    Like the description, fast shipping, perfect.
    Laura Masson
    France
    5 stars
    2026-04-10 23:26
    Received quickly but not tested to date-fast shipping
    Jonas Mindaugas
    Lithuania
    5 stars
    2026-04-09 00:34
    Thank you. Super.
    Juan Carlos
    Spain
    5 stars
    2026-04-08 23:34
    Excellent product and fantastic seller.
    Ana Paula
    Brazil
    5 stars
    2026-04-08 22:40
    Okay okay description confirm!