CSD18513Q5AT Texas Instruments | Specification, Inventory, Distributors and Datasheet

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CSD18513Q5AT Specification

Specification

Mfr Part

CSD18513Q5AT

Category

Transistors - FETs, MOSFETs - Single

Manufacturer

Texas Instruments

Series

NexFET

Packaging

Tape & Reel (TR)

Status

Active

Environmental Compliance

Lead Free

Radiation Hardening

REACH SVHC

No SVHC

RoHS

Compliant

HS Code

Technical Parameter

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25℃

124A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.3mOhm @ 19A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

61 nC @ 10 V

Vgs (Max)

?0V

Input Capacitance (Ciss) (Max) @ Vds

4280 pF @ 20 V

FET Feature

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55 ℃ ~ 150 ℃ (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (5x6)

Package / Case

8-PowerTDFN

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