Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25℃
19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2640 pF @ 20 V
Power Dissipation (Max)
3.1W (Ta), 120W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-VSONP (5x6)
Package / Case
8-PowerTDFN
