CSD17585F5
CSD17585F5
Active
Description:  MOSFET N-CH 30V 5.9A 3PICOSTAR
Manufacturer:  Texas Instruments
Datasheet:   CSD17585F5 Datasheet
History Price: $0.49000
In Stock: 35150
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CSD17585F5 Specification
Specification
Mfr Part
CSD17585F5
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Texas Instruments
Series
FemtoFET
Packaging
Tape & Reel (TR)
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25℃
5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
27mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id
1.7V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
5.1 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PICOSTAR
Package / Case
3-SMD, No Lead
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CSD17585F5 Description

## Texas Instruments CSD17585F5 Overview

The Texas Instruments CSD17585F5 is a high-performance N-channel MOSFET designed to deliver superior efficiency, fast switching, and reliability in power applications. It is widely used in power management, switching regulators, DC-DC converters, and other high-frequency applications that require fast switching and low conduction losses. This MOSFET is particularly suitable for designs requiring high power density and thermal efficiency.

## Key Features

* Low On-Resistance (Rds(on)): The CSD17585F5 features an ultra-low on-resistance, typically as low as 8.5mΩ at Vgs = 10V. This reduces conduction losses, which results in improved efficiency and thermal performance in power systems.

* Low Gate Charge (Qg): With a low total gate charge of around 20nC (typical), the device allows for fast switching speeds, making it ideal for high-frequency applications such as switching power supplies, motor drivers, and automotive systems.

* High Current Rating: The MOSFET can handle a continuous drain current of 60A at 25°C with low thermal resistance, which supports high power designs and helps prevent thermal runaway in demanding applications.

* Wide Voltage Rating: The device has a drain-to-source voltage (Vds) rating of 30V, making it suitable for low-voltage, high-performance power conversion applications.

* Low Gate-Source Leakage Current: The gate-source leakage current (Igss) is minimal, which contributes to the overall reliability of the device, especially in long-term operation.

* High-Speed Switching: Thanks to its low gate charge and low capacitances, the CSD17585F5 delivers fast switching characteristics, improving the overall efficiency of switching power supplies and reducing switching losses.

* Compact Package: The CSD17585F5 is packaged in a compact 5x6mm F5 package, making it suitable for space-constrained designs where high power density is needed.

* Thermal Performance: With a low junction-to-thermal resistance (RθJC) of around 2.5°C/W, the device ensures good thermal dissipation, preventing overheating in high-power applications.

## Applications

* DC-DC Converters: Due to its low Rds(on) and high current-handling capability, the CSD17585F5 is ideal for use in DC-DC conversion circuits, where efficiency and fast switching are critical.

* Power Management: It is commonly used in power management systems in consumer electronics, industrial applications, and computing, where efficient voltage regulation and power delivery are essential.

* Motor Drivers: The MOSFET’s low gate charge and high switching speed make it an excellent choice for motor driver applications, including inverters and motor controllers.

* Automotive Systems: It is used in automotive power systems for battery management, power distribution, and electric vehicle (EV) motor control, where both efficiency and thermal performance are key.

* Power Supply Modules: The device is used in various power supply modules, including power bricks, battery chargers, and other high-efficiency power electronics.

* Inductive Loads: Its fast switching and high current capacity make it suitable for switching applications involving inductive loads such as transformers and solenoids.

## Electrical Specifications

* Drain-Source Voltage (Vds): 30V
* Continuous Drain Current (Id): 60A (at 25°C)
* Pulsed Drain Current (Id,pulse): 240A (for pulse width ≤ 100µs)
* Gate-Source Voltage (Vgs): ±20V
* On-Resistance (Rds(on)): 8.5mΩ (typical at Vgs = 10V)
* Total Gate Charge (Qg): 20nC (typical)
* Gate Threshold Voltage (Vgs(th)): 1.0V to 3.0V
* Input Capacitance (Ciss): 2200pF (typical)
* Output Capacitance (Coss): 200pF (typical)
* Reverse Transfer Capacitance (Crss): 70pF (typical)
* Body Diode Forward Voltage (Vf): 1.0V (typical)
* Gate-Source Leakage Current (Igss): ±100nA (max)
* Drain-Source Leakage Current (Idss): 1µA (max at Vds = 30V)
* Thermal Resistance (Junction to Case): 2.5°C/W (typical)
* Thermal Resistance (Junction to Ambient): 62°C/W (typical)

## Mechanical Characteristics

* Package Type: F5 (5x6mm, 5-pin)
* Package Dimensions: 5mm x 6mm x 1.1mm
* Mounting Type: Surface Mount
* Lead Pitch: 1.27mm
* Weight: Approximately 0.05g

## Functional Description

The CSD17585F5 is designed with an N-channel MOSFET architecture, providing excellent performance for high-frequency switching applications. It features a low on-resistance that minimizes conduction losses, which is crucial for enhancing efficiency in high-current applications. Its high current rating (60A) allows it to handle large amounts of power while maintaining minimal heat generation, even in demanding applications.

One of the standout features of this device is its fast switching capability, which is made possible by the low gate charge and low input capacitance. These characteristics reduce switching losses and improve overall system efficiency, particularly in DC-DC converters and high-speed motor drivers.

The low thermal resistance ensures that heat generated during operation is dissipated efficiently, allowing for continuous operation without thermal throttling. This is especially beneficial in applications that require sustained high current, such as inverters or automotive power systems.

The MOSFET is also equipped with a body diode, which provides inherent protection in switching applications, preventing damage from voltage spikes caused by inductive load switching.

## Summary of Key Specifications

* Drain-Source Voltage: 30V
* On-Resistance (Rds(on)): 8.5mΩ (typical at Vgs = 10V)
* Gate Charge (Qg): 20nC (typical)
* Continuous Drain Current: 60A
* Thermal Resistance (Junction to Case): 2.5°C/W
* Thermal Resistance (Junction to Ambient): 62°C/W
* Package: F5 (5x6mm)

## Conclusion

The Texas Instruments CSD17585F5 is a highly efficient and reliable N-channel MOSFET ideal for a wide range of power applications. Its combination of low on-resistance, fast switching, high current rating, and excellent thermal performance makes it perfect for use in high-speed switching regulators, power supplies, motor drivers, and other demanding applications. Whether in consumer electronics, automotive systems, or industrial power management, the CSD17585F5 offers a robust and efficient solution for modern power designs.
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  • Customer Reviews
    4.95 out of 5.00 stars from 66 customer reviews from all over the world
    Ana Paula
    Brazil
    5 stars
    2026-04-08 22:40
    Okay okay description confirm!
    Ana Clara Lima
    Brazil
    5 stars
    2026-04-08 22:22
    Arrived very fast, apparently product quality
    Cláudia
    Brazil
    5 stars
    2026-04-08 13:14
    Still not tested for check
    Fátima
    Brazil
    5 stars
    2026-04-08 02:44
    Thanks for the product
    Donald Simmons
    United States
    5 stars
    2026-04-08 02:02
    Very good seller very fast I recommend it
    Nicolás
    Spain
    5 stars
    2026-04-08 00:49
    All right. Fast Shipping. Thank you