CSD17579Q5A
CSD17579Q5A
Active
Description:  MOSFET N-CH 30V 25A 8VSON
Manufacturer:  Texas Instruments
Datasheet:   CSD17579Q5A Datasheet
History Price: $0.68000
In Stock: 28850
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CSD17579Q5A Specification
Specification
Mfr Part
CSD17579Q5A
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Texas Instruments
Series
NexFET
Packaging
Tape & Reel (TR)
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25℃
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.7mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
15.1 nC @ 10 V
Vgs (Max)
?0V
Input Capacitance (Ciss) (Max) @ Vds
1030 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 36W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-VSONP (5x6)
Package / Case
8-PowerTDFN
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CSD17579Q5A Description
Introduction to Texas Instruments CSD17579Q5A

The Texas Instruments CSD17579Q5A is a high-performance N-channel MOSFET designed for use in various power management applications, including DC-DC converters, motor drives, and load switching. This device features a low on-resistance and fast switching capabilities, making it suitable for high-efficiency designs. Its compact package and thermal performance characteristics further enhance its applicability in modern electronic circuits.

Key Specifications

- Type: N-channel MOSFET
- Maximum Drain-Source Voltage (V_DS): 30V, which allows it to handle a wide range of voltage levels in various applications.
- Continuous Drain Current (I_D): The CSD17579Q5A can handle up to 60A of continuous current at a case temperature of 25°C, making it suitable for high-current applications.
- On-Resistance (R_DS(on)): With an on-resistance of approximately 4.5 mΩ at V_GS = 10V, this MOSFET ensures minimal power loss during operation, which is critical for improving overall system efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 1.0V to 2.5V, allowing for compatibility with low-voltage drive circuits.
- Total Gate Charge (Q_g): The total gate charge is around 20 nC at V_GS = 10V, facilitating fast switching speeds and reducing the power required for gate drive.
- Thermal Resistance (RθJA): The thermal resistance from junction-to-ambient is approximately 30°C/W, indicating good thermal performance which is vital for maintaining reliability under load conditions.
- Package Type: The device comes in a QFN (Quad Flat No-lead) package with dimensions of 5mm x 6mm, providing a compact footprint ideal for space-constrained applications.

Features and Benefits

1. Low On-State Resistance: The low R_DS(on) value minimizes conduction losses when the MOSFET is turned on, enhancing efficiency especially in high-frequency applications.

2. Fast Switching Speed: Designed for rapid turn-on and turn-off transitions, the CSD17579Q5A reduces switching losses significantly, making it suitable for applications where efficiency is paramount.

3. High Current Handling Capability: With its ability to handle up to 60A continuously, this MOSFET can be effectively used in demanding power applications without overheating or failing.

4. Compact Design: The QFN package not only saves board space but also improves thermal performance due to its efficient heat dissipation characteristics.

5. Robust Performance: Operating over a wide temperature range from -55°C to +150°C ensures that the CSD17579Q5A remains reliable in various environmental conditions and application scenarios.

6. Ease of Integration: Its compatibility with standard drive voltages makes it easy to integrate into existing designs without requiring extensive modifications.

7. Enhanced Reliability: Designed with robust protection features against overcurrent and thermal overloads, the CSD17579Q5A helps ensure long-term reliability in critical applications.

Applications

The CSD17579Q5A is ideal for a variety of applications:

- DC-DC Converters: Used as a synchronous rectifier or switch in buck converters where high efficiency and compact size are essential.

- Power Management Systems: Suitable for power distribution networks within consumer electronics and industrial systems that require efficient load management.

- Motor Drives: Effective in driving DC motors or brushless DC motors where high current handling and fast switching are necessary for optimal performance.

- Load Switches: Can be utilized as an electronic load switch in battery-powered devices where minimizing quiescent current is crucial.

- Renewable Energy Systems: Employed in solar inverter designs where efficient conversion of energy is needed to maximize output from solar panels.

Conclusion

In summary, the Texas Instruments CSD17579Q5A is a highly efficient N-channel MOSFET that offers exceptional performance across various power management applications. Its low on-resistance, high current handling capability, and fast switching characteristics make it an excellent choice for modern electronic designs focused on efficiency and reliability. Whether used in DC-DC converters or motor drives, this device provides engineers with the performance needed to meet today’s demanding specifications while ensuring long-term operational stability.
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  • Customer Reviews
    4.95 out of 5.00 stars from 146 customer reviews from all over the world
    Jonas Mindaugas
    Lithuania
    5 stars
    2026-04-09 00:34
    Thank you. Super.
    Juan Carlos
    Spain
    5 stars
    2026-04-08 23:34
    Excellent product and fantastic seller.
    Ana Paula
    Brazil
    5 stars
    2026-04-08 22:40
    Okay okay description confirm!
    Ana Clara Lima
    Brazil
    5 stars
    2026-04-08 22:22
    Arrived very fast, apparently product quality
    Cláudia
    Brazil
    5 stars
    2026-04-08 13:14
    Still not tested for check
    Fátima
    Brazil
    5 stars
    2026-04-08 02:44
    Thanks for the product