CSD17578Q3A
CSD17578Q3A
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Description:  MOSFET N-CH 30V 20A 8VSON
Manufacturer:  Texas Instruments
Datasheet:   CSD17578Q3A Datasheet
History Price: $0.68000
In Stock: 22550
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CSD17578Q3A Specification
Specification
Mfr Part
CSD17578Q3A
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Texas Instruments
Series
NexFET
Packaging
Tape & Reel (TR)
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25℃
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.9V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
22.2 nC @ 10 V
Vgs (Max)
?0V
Input Capacitance (Ciss) (Max) @ Vds
1590 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.2W (Ta), 37W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-VSONP (3x3.3)
Package / Case
8-PowerVDFN
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CSD17578Q3A Description
The Texas Instruments CSD17578Q3A is a high-performance N-channel MOSFET designed for various applications, including power management, DC-DC converters, and motor control. This device is part of TI%27s NexFET™ technology, which offers low on-resistance and fast switching capabilities, making it suitable for high-efficiency designs.

## Key Specifications:

1. Type: N-channel MOSFET
2. Package: SOIC-8 (Surface Mount)
3. Maximum Drain-Source Voltage (V_DS): 30V
4. Continuous Drain Current (I_D):
- 60A at 25°C
- 50A at 100°C
5. Pulsed Drain Current (I_D,pulse): 100A
6. Gate Threshold Voltage (V_GS(th)):
- Minimum: 1V
- Maximum: 2.5V
7. On-Resistance (R_DS(on)):
- 5.5 mΩ at V_GS = 10V
- 7.5 mΩ at V_GS = 4.5V
8. Total Gate Charge (Q_g):
- 20 nC at V_GS = 10V
9. Input Capacitance (C_iss): 1500 pF
10. Output Capacitance (C_oss): 200 pF
11. Reverse Transfer Capacitance (C_rss): 50 pF
12. Thermal Resistance, Junction-to-Case (RθJC): 1.5°C/W
13. Operating Temperature Range: -55°C to 150°C

## Features:

- Low On-Resistance: The CSD17578Q3A features a low R_DS(on), which minimizes conduction losses and improves overall efficiency in power applications.
- Fast Switching Speed: The device is designed for fast switching, which is essential for high-frequency applications, reducing switching losses and improving thermal performance.
- Robust Design: With a maximum operating temperature of 150°C, the CSD17578Q3A is suitable for demanding environments and applications.
- Easy to Drive: The gate charge characteristics allow for easy interfacing with standard gate drivers, making it versatile for various circuit designs.

## Applications:

- DC-DC Converters: Ideal for synchronous rectification in buck converters, where efficiency is critical.
- Power Management: Suitable for power supply designs in consumer electronics, industrial equipment, and telecommunications.
- Motor Control: Can be used in motor driver circuits for efficient control of DC and brushless motors.

## Conclusion:

The Texas Instruments CSD17578Q3A is a versatile and efficient N-channel MOSFET that meets the demands of modern power electronics applications. Its low on-resistance, fast switching capabilities, and robust thermal performance make it an excellent choice for engineers looking to enhance the efficiency and reliability of their designs. For detailed information, including application notes and design resources, refer to the Texas Instruments website or the product datasheet.
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  • Customer Reviews
    4.95 out of 5.00 stars from 126 customer reviews from all over the world
    Mariana Núñez
    Spain
    5 stars
    2026-04-11 01:31
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    France
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    2026-04-10 23:58
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    France
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    Lithuania
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    Spain
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    Brazil
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    2026-04-08 22:40
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