The Nexperia BAT85,113 is a Schottky diode designed for general-purpose applications, featuring a low forward voltage drop and high-speed switching capabilities. It is specifically designed to meet the needs of low-voltage, low-power, and high-speed applications, offering superior performance in terms of efficiency and thermal management.

## General Description

The BAT85 is a small-signal Schottky diode featuring a low forward voltage, typically around 0.3 V at 1 mA of current, which makes it ideal for use in situations where minimal power loss and fast switching are required. This diode is housed in a SOT-23 package, which provides a compact and space-efficient solution for a variety of electronic designs. It is widely used in applications such as rectification, signal clamping, and protection circuits.

The BAT85 provides reliable operation in applications requiring small signals, such as radio-frequency (RF) systems, low-voltage power supplies, and switching circuits. Its low forward voltage and small package size make it an excellent choice for applications where minimal power dissipation is critical.

## Key Features

* Low Forward Voltage: 0.3 V (typical at 1 mA)
* Fast Switching Speed: Fast response time for high-frequency applications
* Reverse Current: Low reverse current (ideal for high-efficiency designs)
* Package Type: SOT-23, 3-pin package (compact for space-saving designs)
* Operating Temperature Range: –55°C to +125°C
* RoHS Compliant: Lead-free, environmentally friendly
* Low Capacitance: Suitable for high-speed switching
* Small Signal Diode: Ideal for low-current, low-voltage applications
* Low Power Loss: Excellent efficiency in low-voltage power systems

## Typical Applications

* Rectification: The BAT85 is commonly used in rectifier circuits, particularly in power supplies that require efficient energy conversion with minimal losses.
* Clamping and Protection: It is frequently used in signal clamping circuits where it can protect sensitive components from voltage spikes or transients.
* Switching Circuits: The BAT85 excels in switching applications where fast response times are essential, such as logic circuits or digital systems.
* RF Systems: It is used in high-frequency applications, such as RF signal processing and mixing.
* Power Management: In low-power systems, the BAT85 provides a highly efficient path for current flow, minimizing power losses.

## Absolute Maximum Ratings

| Parameter | Symbol | Value | Unit |
| ---------------------------------- | ------- | ----------- | ---- |
| Reverse Voltage | VR | 30 | V |
| Forward Current (Average) | IF(av) | 300 | mA |
| Forward Current (Peak, 1 ms pulse) | IFM | 500 | mA |
| Storage Temperature | Tstg | –55 to +150 | °C |
| Junction Temperature | TJ | +150 | °C |
| Power Dissipation | PD | 200 | mW |
| Soldering Temperature (10 s) | TSOLDER | +260 | °C |

## Electrical Characteristics (Typical at TA = 25°C unless otherwise specified)

| Parameter | Symbol | Conditions | Min | Typical | Max | Unit |
| -------------------------------- | ------ | --------------------- | --- | ------- | --- | ---- |
| Forward Voltage | VF | IF = 1 mA | 0.2 | 0.3 | 0.4 | V |
| Reverse Current | IR | VR = 30 V | | 0.1 | 10 | µA |
| Capacitance | Cj | VR = 0 V, f = 1 MHz | | 4 | 8 | pF |
| Reverse Recovery Time | trr | IF = 1 mA, IR = 10 mA | | 3 | 5 | ns |
| Junction Capacitance | Cj | VR = 0 V | | 1 | 2 | pF |
| Maximum Reverse Recovery Current | IRR | IF = 1 mA, IR = 10 mA | | 2 | 10 | mA |

## Functional Description

* Schottky Barrier: The BAT85 is a Schottky diode, which means it uses a metal-semiconductor junction instead of the conventional PN junction used in standard diodes. This provides the BAT85 with a much lower forward voltage drop, typically 0.2 V to 0.3 V at 1 mA. The lower forward voltage drop results in reduced power losses and better energy efficiency, especially in low-voltage systems.

* Low Reverse Recovery Time: One of the significant advantages of the BAT85 is its low reverse recovery time, which is typically around 3 ns. This allows the diode to switch rapidly between conducting and non-conducting states, making it suitable for high-frequency applications where speed is critical. It is particularly useful in high-speed switching circuits and RF applications.

* Reverse Leakage Current: The BAT85 exhibits very low reverse leakage current (typically 0.1 µA at 30 V), which is crucial for maintaining low-power consumption in battery-powered or energy-efficient systems. This characteristic ensures that very little current is wasted when the diode is in its reverse-biased state, which is particularly important in low-power and battery-operated devices.

* Capacitance: The diode has low junction capacitance, typically 4 pF at 1 MHz, which minimizes the delay in high-frequency signal applications, ensuring that the diode does not slow down the circuit's response time. This makes the BAT85 ideal for RF circuits and other high-speed electronic systems.

* Thermal Stability: The BAT85 operates across a wide temperature range of –55°C to +150°C, allowing it to perform reliably in extreme environmental conditions. This wide operational temperature range makes it suitable for automotive, industrial, and other high-stress applications where thermal variations are a concern.

* Package and Mounting: The BAT85 is provided in a SOT-23 package, a small surface-mount package that is well-suited for space-constrained applications. The SOT-23 package is a widely used industry standard, offering a compact form factor that ensures efficient PCB layout and space savings.

## Package and Pin Configuration

* Package Type: The BAT85 is housed in the SOT-23 package, a compact 3-pin package commonly used for diodes and transistors in small electronic devices.
* Pinout:

* Pin 1: Anode (A)
* Pin 2: Cathode (K)
* Pin 3: No connection or ground depending on application (may be used for heat sinking or additional functionality)

## Thermal Considerations

* Thermal Resistance: The BAT85 has a junction-to-ambient thermal resistance (θJA) of around 250°C/W. This value indicates how effectively heat generated during operation can be dissipated. Designers must ensure that there is adequate PCB copper area or other heat dissipation methods, especially in applications with high current flow.

* Power Dissipation: The device has a maximum power dissipation of 200 mW, so care must be taken to ensure that the diode does not exceed this value under normal operating conditions, especially when conducting higher currents.

## Reliability and Compliance

* RoHS Compliant: The BAT85 is RoHS compliant, meaning it meets the Restriction of Hazardous Substances (RoHS) directive and does not contain harmful substances such as lead, cadmium, or mercury.

* Reliability: The diode is designed to be reliable even under high-stress conditions, such as in automotive or industrial applications where thermal fluctuations, voltage transients, and mechanical stress are common.

## Conclusion

The Nexperia BAT85,113 is a highly efficient Schottky diode that offers excellent performance for a range of low-power, low-voltage, and high-speed applications. With its low forward voltage drop, low reverse leakage current, fast switching speed, and high-frequency performance, it is an excellent choice for rectification, signal clamping, and protection in power management, communication, and RF systems. The compact SOT-23 package and wide operating temperature range make the BAT85 a versatile and reliable component for space-constrained and demanding environments, including automotive, industrial, and consumer electronics.