Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25℃
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
34mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 20 V
Power Dissipation (Max)
1.75W (Ta), 60W (Tc)
Operating Temperature
150 ℃ (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
