Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25℃
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 20 V
Power Dissipation (Max)
1.65W (Ta), 65W (Tc)
Operating Temperature
150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SMP-FD
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
