2SC5775
2SC5775
Active
Description:  POWER BIPOLAR TRANSISTOR NPN
Manufacturer:  onsemi
Datasheet:   2SC5775 Datasheet
History Price: $1.23000
In Stock: 13000
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49000
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Apr 21, 2026
2SC5775 Specification
Specification
Mfr Part
2SC5775
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
onsemi
Series
-
Packaging
Bulk
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
-
Frequency - Transition
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
2SC5775 PDF Datasheet
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2SC5775 Description
The ON Semiconductor 2SC5775 is a high-performance NPN bipolar junction transistor (BJT) designed for various applications, including audio amplification, switching, and general-purpose amplification. This transistor is particularly valued for its high current gain, low saturation voltage, and robust performance characteristics, making it suitable for a wide range of electronic circuits.

## Overview

The 2SC5775 is designed to operate in a variety of environments and is commonly used in consumer electronics, industrial applications, and automotive systems. Its ability to handle significant power levels while maintaining efficiency makes it a popular choice among engineers and designers.

## Key Specifications

1. Device Type:
- Configuration: NPN Bipolar Junction Transistor
- Package Type: TO-220 or TO-247 (depending on the variant)

2. Electrical Characteristics:
- V_CE (Collector-Emitter Voltage): 60V
- This is the maximum voltage that can be applied between the collector and emitter terminals without causing breakdown.
- I_C (Collector Current): 15A
- This rating indicates the maximum continuous current that the transistor can handle, making it suitable for high-power applications.
- P_D (Power Dissipation): 75W
- This value indicates the maximum power the transistor can dissipate without overheating, ensuring reliable operation in demanding conditions.

3. Gain Characteristics:
- h_FE (DC Current Gain): 50 to 300 (at I_C = 3A)
- The current gain is a critical parameter that indicates how much the input current is amplified in the output. A higher h_FE value means better amplification capabilities.

4. Switching Characteristics:
- V_BE (Base-Emitter Voltage): 1.2V (typical at I_C = 3A)
- This is the voltage required to turn the transistor on, allowing current to flow from collector to emitter.
- t_on (Turn-On Time): 0.5 µs (typical)
- t_off (Turn-Off Time): 0.5 µs (typical)
- These values indicate the speed at which the transistor can switch on and off, which is important for applications requiring fast response times.

5. Thermal Characteristics:
- T_j (Junction Temperature): -55°C to +150°C
- This range indicates the operational temperature limits for the device, ensuring reliability in various environmental conditions.
- Thermal Resistance, Junction to Case (RθJC): 1.5°C/W (typical)
- This parameter indicates how effectively heat is dissipated from the junction to the case, which is crucial for maintaining performance under load.

## Applications

The ON Semiconductor 2SC5775 is suitable for a wide range of applications, including:

- Audio Amplification: Used in audio power amplifiers for driving speakers and enhancing sound quality.
- Switching Applications: Ideal for switching power supplies, motor drivers, and relay drivers.
- General-Purpose Amplification: Can be used in various analog circuits for signal amplification.
- Power Management: Suitable for use in power management circuits, including voltage regulators and DC-DC converters.

## Conclusion

The ON Semiconductor 2SC5775 is a versatile and robust NPN transistor that offers excellent performance characteristics for a variety of applications. With its high current handling capabilities, low saturation voltage, and wide operational temperature range, it is an ideal choice for engineers looking to design reliable and efficient electronic circuits. Its ability to operate effectively in both audio and switching applications makes it a valuable component in modern electronic designs.
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  • Customer Reviews
    4.95 out of 5.00 stars from 86 customer reviews from all over the world
    Elena Rinaldi
    Italy
    5 stars
    2026-04-13 16:02
    All right!! The Seller is fantastic ultra fast!! Thanks!!
    Javier Manuel
    Spain
    5 stars
    2026-04-13 15:21
    Todo corresponds with the order.
    Teresa Cordero
    Spain
    5 stars
    2026-04-13 13:39
    Need to test fast shipping
    Andrius Gintaras
    Lithuania
    5 stars
    2026-04-13 09:59
    All received IGBT transitors are good quality.
    Hilda
    Brazil
    5 stars
    2026-04-13 09:51
    Received the product, all OK, super satisfied.
    Sophie Bakker
    Netherlands
    5 stars
    2026-04-13 08:27
    Fast shipping, well packaged! This is the first seller that has properly protected the current sensors with some foam. Extra stars for this shop, recommended!