15GN03F-TL-E
15GN03F-TL-E
Active
Description:  BIP NPN 70MA 10V FT=1.5G
Manufacturer:  onsemi
History Price: $0.06000
In Stock: 23000
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15GN03F-TL-E Specification
Specification
Mfr Part
15GN03F-TL-E
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
onsemi
Series
-
Packaging
Bulk
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
-
Voltage - Collector Emitter Breakdown (Max)
-
Frequency - Transition
-
Noise Figure (dB Typ @ f)
-
Gain
-
Power - Max
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Current - Collector (Ic) (Max)
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
15GN03F-TL-E PDF Datasheet
15GN03F-TL-E Description
The onsemi 15GN03F-TL-E is a high-performance N-channel MOSFET designed for power management applications. Below is a detailed breakdown of its specifications and features:

## General Description

The onsemi 15GN03F-TL-E is an N-channel MOSFET designed for efficient power switching in both low and high-voltage systems. It is part of the company's SuperFET™ II series, which is optimized for low Rds(on) and high-efficiency switching. It is commonly used in applications such as power supplies, DC-DC converters, and motor control circuits.

## Key Features

* Low Gate Charge: The device features a low gate charge, which allows for faster switching speeds and reduces the power loss during switching transitions.
* Low Rds(on): The Rds(on) value is very low, which minimizes conduction losses and ensures higher efficiency.
* High Current Handling: The MOSFET is designed to handle high current, making it suitable for high-power applications.
* Thermal Stability: The device is built to maintain stability under high thermal conditions, which helps in reducing thermal runaway.
* Fast Switching: Ideal for use in applications requiring high-speed switching and low power consumption.

## Electrical Characteristics

* Drain-Source Voltage (Vds): 30V

* This is the maximum voltage the MOSFET can handle between the drain and the source without causing damage.
* Continuous Drain Current (Id): 15A

* The MOSFET can continuously handle a current of 15A, which makes it suitable for high-power applications.
* Gate Threshold Voltage (Vgs(th)): 1V - 3V

* The gate threshold voltage refers to the voltage required at the gate to begin turning on the MOSFET. A lower threshold voltage enables the MOSFET to switch on at a lower gate voltage, improving switching efficiency.
* Rds(on) (at Vgs = 10V): 20mΩ (Max)

* The on-state resistance (Rds(on)) is the resistance between the drain and source when the MOSFET is fully on. A lower value means less energy lost as heat during conduction.

## Thermal Characteristics

* Junction-to-Case Thermal Resistance (RθJC): 4°C/W

* This parameter indicates how well the MOSFET can dissipate heat through its package. Lower thermal resistance is better for high-power applications.

* Junction-to-Ambient Thermal Resistance (RθJA): 62°C/W

* The ability of the device to dissipate heat into the surrounding environment. A lower value indicates better thermal management.

* Maximum Junction Temperature (Tj): 150°C

* This is the highest temperature the device can safely operate at without causing damage.

## Package Type

* TO-220

* The device comes in a TO-220 package, which is a common package type for power MOSFETs. It provides a large surface area for heat dissipation and is easy to mount onto a heatsink for better thermal performance.

## Applications

* Power Management: Used in power supply circuits, DC-DC converters, and inverters for efficient voltage regulation.
* Motor Control: The MOSFET’s high current capacity makes it suitable for motor driver circuits, particularly in industrial and automotive applications.
* Switching Power Supplies: Due to its fast switching capability, it is ideal for high-efficiency power supplies, reducing energy losses.

## Performance Advantages

1. Efficiency: The combination of low Rds(on) and low gate charge ensures that the 15GN03F-TL-E operates efficiently, reducing energy losses in switching power supplies and other power conversion circuits.
2. Thermal Performance: The device’s robust thermal characteristics ensure that it can handle high loads and continue to perform without overheating.
3. Reliability: onsemi’s SuperFET™ II technology provides enhanced reliability, which is crucial for high-power applications where device failure can be costly.

## Conclusion

The onsemi 15GN03F-TL-E is a highly efficient N-channel MOSFET with low on-resistance, high current handling, and excellent thermal performance. Its features make it suitable for a variety of applications, from power supplies to motor control, providing a combination of low power loss, high-speed switching, and reliable operation under demanding conditions.
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  • Customer Reviews
    4.95 out of 5.00 stars from 86 customer reviews from all over the world
    Valentina
    Spain
    5 stars
    2026-04-13 18:12
    Product good, as described.
    Éva Lefebvre
    France
    5 stars
    2026-04-13 17:07
    Very fast thank you
    Benjamin Dupuis
    France
    5 stars
    2026-04-13 16:57
    They are missing in my order...
    Timothy Gonzales
    United States
    5 stars
    2026-04-13 16:08
    Ordered 30 pcs, Tested one, Functions as described. Received in 14 days after order placement(Standard combined Shipping to the Netherlands).
    Elena Rinaldi
    Italy
    5 stars
    2026-04-13 16:02
    All right!! The Seller is fantastic ultra fast!! Thanks!!
    Javier Manuel
    Spain
    5 stars
    2026-04-13 15:21
    Todo corresponds with the order.