MSJU11N65A-TP
MSJU11N65A-TP
Active
Description:  N-CHANNEL MOSFET, DPAK
History Price: $1.76000
In Stock: 38000
MSJU11N65A-TP vs MSJP20N65A-BP
Series
-
-
Packaging
Tape & Reel (TR)
Tube
Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
650 V
Current - Continuous Drain (Id) @ 25℃
11A
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 3.2A, 10V
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
53 nC @ 10 V
Vgs (Max)
?0V
?0V
Input Capacitance (Ciss) (Max) @ Vds
763 pF @ 25 V
1860 pF @ 25 V
FET Feature
-
-
Power Dissipation (Max)
83.3W (Tc)
151W
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Supplier Device Package
DPAK (TO-252)
TO-220AB (H)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-220-3