FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
30 V
Current - Continuous Drain (Id) @ 25℃
4A (Ta)
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
4V, 10V
Rds On (Max) @ Id, Vgs
52mOhm @ 2A, 4V
98mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4 V
5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 10 V
250 pF @ 10 V
Power Dissipation (Max)
1W (Ta)
1.5W (Ta)
Operating Temperature
150 ℃ (TJ)
150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
3-MCPH
6-MCPH
Package / Case
3-SMD, Flat Leads
6-SMD, Flat Leads
