FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
100 V
Current - Continuous Drain (Id) @ 25℃
4A (Ta)
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
4V, 10V
Rds On (Max) @ Id, Vgs
52mOhm @ 2A, 4V
1.85mOhm @ 250mA, 10V
Vgs(th) (Max) @ Id
-
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4 V
3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 10 V
80 pF @ 20 V
Power Dissipation (Max)
1W (Ta)
800mW (Ta)
Operating Temperature
150 ℃ (TJ)
150 ℃
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
3-MCPH
3-MCPH
Package / Case
3-SMD, Flat Leads
3-SMD, Flat Leads
